Positive tone bi-layer imprint lithography method
First Claim
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1. A method of patterning a substrate, said method comprising:
- creating a multi-layered structure by forming, on said substrate, a patterned layer having protrusions and recessions, and forming, upon said patterned layer, a conformal layer, with said multi-layered structure having a crown surface facing away from said substrate; and
selectively removing portions of said multi-layered structure to expose regions of said substrate in superimposition with said protrusions while forming a hard mask in areas of said crown surface in superimposition with said recessions.
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Abstract
The present invention provides a method to pattern a substrate which features creating a multi-layered structure by forming, on the substrate, a patterned layer having protrusions and recessions. Formed upon the patterned layer is a conformal layer, with the multi-layered structure having a crown surface facing away from the substrate. Portions of the multi-layered structure are removed to expose regions of the substrate in superimposition with the protrusions, while forming a hard mask in areas of the crown surface in superimposition with the recessions.
176 Citations
27 Claims
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1. A method of patterning a substrate, said method comprising:
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creating a multi-layered structure by forming, on said substrate, a patterned layer having protrusions and recessions, and forming, upon said patterned layer, a conformal layer, with said multi-layered structure having a crown surface facing away from said substrate; and
selectively removing portions of said multi-layered structure to expose regions of said substrate in superimposition with said protrusions while forming a hard mask in areas of said crown surface in superimposition with said recessions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of patterning a substrate, said method comprising:
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forming, on said substrate, a patterned layer, having protrusions and recessions, from a substantially silicon free polymerizble fluid employing imprint lithography techniques to form a silicon-free polymerized layer;
creating a conformal layer, adjacent to said silicon-free polymerized layer, from a silicon-containing polymerizable fluid employing imprint lithography techniques to form a silicon-containing polymerized layer having a normalization surface that faces away from said substrate; and
selectively removing portions of said silicon-containing polymerized layer and said silicon-free polymerized layer to expose regions of said substrate in superimposition with said protrusions while forming a hard mask in areas of said surface in superimposition with said recessions. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A method of patterning a substrate, said method comprising:
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forming, on said substrate a patterned layer, having protrusions and recessions, by depositing a silicon-free polymerizable fluid on said substrate and contacting said silicon-free polymerizable fluid with a first surface of a first mold, said first surface having a profile complementary to said protrusions and said recessions, and subjecting said silicon-free polymerizable fluid composition to conditions to polymerize said silicon-free polymerizable fluid composition, forming a silicon-free polymerized layer;
creating a conformal layer adjacent to said silicon-free polymerized layer by depositing a silicon-containing polymerizable fluid upon said patterned layer and contacting said silicon-containing polymerizable fluid composition with a second mold having a substantially planar surface and subjecting said silicon-containing polymerizable fluid composition to conditions to polymerize said silicon-containing polymerizable fluid composition, forming a planar silicon-containing polymerized layer; and
selectively removing said silicon-containing polymerized layer and said silicon-free polymerized layer to expose regions of said substrate in superimposition with said protrusions while densifying areas of said surface in superimposition with said recessions. - View Dependent Claims (24, 25, 26)
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27. The method as recited in claim 27 wherein removing portions further includes subjecting said planar side to a blanket etch and exposing said crown surface further includes subjecting said crown surface to an anisotropic plasma etch.
Specification