Thin film transistor and fabrication method thereof
First Claim
1. A thin film transistor, comprising:
- a gate electrode;
a gate insulating layer over the gate electrode;
a microcrystalline semiconductor layer over the gate insulating layer;
an amorphous semiconductor layer over the microcrystalline semiconductor layer;
a source region and a drain region formed on the amorphous semiconductor layer and on opposite sides of the gate electrode respectively; and
a source electrode and a drain electrode deposited on the source and drain regions respectively.
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Abstract
A TFT with a microcrystalline film. The channel is composed by a microcrystalline silicon layer and an amorphous silicon layer. The microcrystalline silicon layer is disposed near the gate electrode as the first channel layer, providing a current flow path in a horizontal orientation. The amorphous silicon layer is disposed away from the gate electrode as the second channel layer, providing a current flow path in a vertical orientation. Accordingly, the driving current of the transistor can be elevated due to the high conductivity of the microcrystalline silicon layer. Moreover, unnecessary current occurring when the transistor is switched off is reduced due to the high resistance of the amorphous silicon layer.
94 Citations
38 Claims
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1. A thin film transistor, comprising:
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a gate electrode;
a gate insulating layer over the gate electrode;
a microcrystalline semiconductor layer over the gate insulating layer;
an amorphous semiconductor layer over the microcrystalline semiconductor layer;
a source region and a drain region formed on the amorphous semiconductor layer and on opposite sides of the gate electrode respectively; and
a source electrode and a drain electrode deposited on the source and drain regions respectively. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A thin film transistor, comprising:
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a gate electrode;
a gate insulating layer over the gate electrode;
a channel layer over the gate insulating layer;
a high resistance layer over the channel layer;
a source region and a drain region formed on the high resistance layer and on opposite sides of the gate electrode respectively; and
a source electrode and a drain electrode deposited on the source and drain regions respectively. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A thin film transistor, comprising:
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a gate electrode;
a gate insulating layer over the gate electrode;
a first channel layer over the gate insulating layer to provide a current flow path parallel to the surface of the gate electrode;
a second channel layer over the first channel layer to provide a current flow path perpendicular to the surface of the gate electrode;
a source region and a drain region formed on the second channel layer and on opposite sides of the gate electrode respectively; and
a source electrode and a drain electrode deposited on the source and drain regions respectively. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24)
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25. A method of fabricating a thin film transistor, comprising the steps of:
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providing a substrate;
forming a gate electrode on the substrate;
forming a gate insulating layer over the gate electrode and the substrate;
forming a microcrystalline semiconductor layer over the gate insulating layer;
forming an amorphous semiconductor layer over the microcrystalline semiconductor layer;
forming a doped semiconductor layer over the amorphous semiconductor layer;
defining the doped semiconductor layer, the amorphous semiconductor layer, and the microcrystalline semiconductor layer to form a active area;
forming a metal layer over the doped semiconductor layer; and
defining the metal layer and the doped semiconductor layer to form a source region and a drain region on the doped semiconductor layer and a source electrode and a drain electrode on the metal layer. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38)
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Specification