Solid-state imaging device and method for manufacturing the same

• US 20040189855A1
• Filed: 03/24/2004
• Published: 09/30/2004
• Est. Priority Date: 03/25/2003
• Status: Active Grant

• Current Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Original Assignee: Fuji Photo Film Co Limited (Fujifilm Holdings Corporation)
• Inventors: Takasaki, Kosuke, Yamamoto, Kiyofumi, Nishida, Kazuhiro
• Granted Patent: US 7,651,881 B2
• Time in Patent Office: Days
• US Class Current: 348/340
• CPC Class Codes: H01L 27/146 Imager structures
• CPC Class Codes: H01L 27/14618 Containers
• CPC Class Codes: H01L 27/14683 Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof not peculiar thereto H01L21/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/16235 Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip

Abstract

A transfer film, on which an adhesive is applied, is glued to plural spacers formed on a glass substrate. The glass substrate is laid on a working table, and one end of the transfer film is fixed to a winding roller. A peeling guide is set at a position over the transfer film. The winding roller is driven to wind the transfer film while the working table moves horizontally. While winding the transfer film, the angle between the glass substrate and the transfer film is kept constant. After the transfer film is peeled off, the adhesive is uniformly transferred to each of the spacers.

Claims

1. A method for manufacturing a solid-state imaging device by sticking a transparent substrate, in which plural frame-shaped spacers are formed, via an adhesive to a wafer on which plural solid-state imaging elements are formed, and by dividing the transparent substrate and the wafer for each solid-state imaging element, each of the solid-state imaging elements on the wafer being surrounded by each of the spacers, the method comprising the steps of:

sticking a transfer member, to which the adhesive is applied, to the spacer;

applying pressure to the transparent substrate and the transfer member; and

releasing the transfer member from the transparent substrate to transfer the adhesive on the spacer.

2. The method according to claim 1, wherein the transfer member is a rigid body.

3. The method according to claim 2, wherein the transfer member is a glass plate.

4. The method according to claim 1, wherein the transfer member is an elastic body.

5. The method according to claim 4, wherein the transfer member is a flexible plastic film.

6. The method according to claim 5, wherein the transfer member is peeled off such that the angle between the transfer member and the transparent substrate is kept constant.

7. The method according to claim 1, further comprising the step of forming a ridge pattern or a recess pattern in the transfer member, the ridge pattern or the recess pattern being the same pattern as the spacers in the transparent substrate.

8. The method according to claim 1, further comprising the step of applying a release agent on the surface of the transfer member.

9. The method according to claim 8, wherein the release agent is silicon.

10. The method according to claim 1, further comprising the step of carrying out surface modification to the surface of the spacer to which the adhesive is applied.

11. The method according to claim 1, wherein the viscosity of the adhesive is 0.1 Pa·

S or more when the adhesive is applied to the transfer member.

12. The method according to claim 1, wherein the adhesive is applied to the transfer member by bar coating, blade coating or spin coating.

13. The method according to claim 1, wherein pressure is applied to the transfer member and the transparent substrate by air pressure or roller pressure.

14. The method according to claim 1, wherein the viscosity of the adhesive is 100 Pa·

S to 10000 Pa·

S when the adhesive is transferred to the spacer from the transfer member.

15. The method according to claim 1, wherein the adhesive has the thickness from 0.5 μ

m to 5.0 μ

m after the adhesive is activated.

16. The method according to claim 1, wherein the spacer is bonded to the wafer over the surface to which the adhesive is applied.

17. A solid-state imaging device manufactured by the method according to claim 1.

18. The solid-state imaging device according to claim 17, wherein the solid-state imaging element and the inner surface of the spacer are separated by 50 μ

m to 100 μ

m over the whole edge of the solid-state imaging element.

19. The solid-state imaging device according to claim 17, wherein the width of the spacer is 100 μ

m to 500 μ

m.

20. The solid-state imaging device according to claim 17, wherein chamfer edges are formed in the surface of the spacer to which the adhesive is applied, the surplus adhesive is contained in the space between the wafer and the chamfer edges.

21. A solid-state imaging device that comprises a solid-state imaging element on a chip wafer, a frame-shaped spacer bounded on the chip wafer via an adhesive, and a transparent plate on the spacer to seal the solid-state imaging element, the solid-state imaging element being surrounded by the spacer;

wherein the solid-state imaging element and the inner surface of the spacer are separated by 50 μ

m to 100 μ

m over the whole edge of the solid-state imaging element.

22. A solid-state imaging device that comprises a solid-state imaging element on a chip wafer, a frame-shaped spacer bounded on the chip wafer via an adhesive, and a transparent plate on the spacer to seal the solid-state imaging element, the solid-state imaging element being surrounded by the spacer;

wherein the width of the spacer is 100 μ

m to 500 μ

m.