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Novel sacrificial layers for use in fabrications of microelectromechanical devices

  • US 20040191946A1
  • Filed: 03/28/2003
  • Published: 09/30/2004
  • Est. Priority Date: 03/28/2003
  • Status: Active Grant
First Claim
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1. A method comprising:

  • providing a substrate;

    depositing a sacrificial layer on the substrate;

    forming one or more structure layers of a microelectromechanical device after the sacrificial layer;

    removing the sacrificial layer for releasing the microelectromechanical device; and

    wherein the sacrificial layer comprises an early transition metal.

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