Novel sacrificial layers for use in fabrications of microelectromechanical devices
First Claim
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1. A method comprising:
- providing a substrate;
depositing a sacrificial layer on the substrate;
forming one or more structure layers of a microelectromechanical device after the sacrificial layer;
removing the sacrificial layer for releasing the microelectromechanical device; and
wherein the sacrificial layer comprises an early transition metal.
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Abstract
A sacrificial layer and a method for applying said sacrificial layer in fabricating microelectromechanical devices are disclosed herein. The sacrificial layer comprises an early transition metal. Specifically, the sacrificial layer comprises an early transition metal element, an early transition metal alloy or an early transition metal silicide.
50 Citations
44 Claims
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1. A method comprising:
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providing a substrate;
depositing a sacrificial layer on the substrate;
forming one or more structure layers of a microelectromechanical device after the sacrificial layer;
removing the sacrificial layer for releasing the microelectromechanical device; and
wherein the sacrificial layer comprises an early transition metal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44)
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Specification