Semiconductor device and manufacturing method thereof

• US 20040192032A1
• Filed: 10/15/2003
• Published: 09/30/2004
• Est. Priority Date: 10/17/2002
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: Maruyama, Hiroyuki, Ohashi, Naohumi, Sato, Kiyohiko, Ohmori, Kazutoshi, Tamaru, Tsuyoshi
• Granted Patent: US 7,176,121 B2
• Time in Patent Office: Days
• US Class Current: 438/655
• CPC Class Codes: H01L 21/76807 for dual damascene structures
• CPC Class Codes: H01L 21/7681 involving one or more buried masks
• CPC Class Codes: H01L 21/76829 characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
• CPC Class Codes: H01L 21/76832 Multiple layers
• CPC Class Codes: H01L 21/76834 formation of thin insulating films on the sidewalls or on top of conductors H01L21/76831 takes precedence
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/53295 Stacked insulating layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor device and a manufacturing method thereof are provided for the improvement of the reliability of copper damascene wiring in which a film between wiring layers and a film between via layers are comprised of an SiOC film with low dielectric constant. A film between wiring layers, a film between wiring layers, and a film between via layers are respectively comprised of an SiOC film, and stopper insulating films and a cap insulating film are comprised of a laminated film of an SiCN film A and an SiC film B. By doing so, it becomes possible to reduce the leakage current of the film between wiring layers, the film between wiring layers, and the film between via layers, and also possible to improve the adhesion of the film between wiring layers, the film between wiring layers, and the film between via layers to the stopper insulating films and the cap insulating film.

Claims

1. A manufacturing method of a semiconductor device in which wiring made of metal is formed of a single layer structure or a multilayer structure,

wherein an interlayer insulating film for electrically isolating the wirings from each other located above and below or side by side is formed of an SiOC film, and an insulating film having the difference in Young'"'"'s modulus from said SiOC film of 50 GPa or less or the difference in stress from said SiOC film of 50 MPa or less is formed so as to come into contact with said SiOC film.

2. A manufacturing method of a semiconductor device in which wiring made of metal is formed of a single layer structure or a multilayer structure,

wherein an interlayer insulating film for electrically isolating the wirings from each other located above and below or side by side is formed of an SiOC film, an relatively thin SiCN film is formed on or below said SiOC film, and an SiC film with a thickness of 5 nm or larger is interposed between said SiOC film and said SiCN film.

3. A manufacturing method of a semiconductor device in which wiring made of metal is comprised of a single layer structure or a multilayer structure,

wherein an interlayer insulating film for electrically isolating the wirings from each other located above and below or side by side is formed of an SiOC film which contains nitrogen, and a relatively thin SiCN film is formed so as to come into contact with said SIOC film.

4. A semiconductor device in which metal wiring is formed in trenches formed in an interlayer insulating film on a semiconductor substrate and a cap insulating film for preventing the diffusion of the metal which constitutes said wiring is formed over each of said interlayer insulating film and said metal wiring,

wherein said interlayer insulating film is comprised of an SIOC film, an SiC film formed on said SiOC film, and an SiON film formed on said SiC film, and

said cap insulating film is comprised of an SiCN film and an SiC film formed on said SiCN film.

5. The semiconductor device according to claim 4,

wherein said SiON film which constitutes a part of said interlayer insulating film has the nitrogen content of 5 atoms % or less or the diffraction ratio of 1.495 or less.

6. The semiconductor device according to claim 4,

wherein a stopper insulating film functioning as an etching stopper when etching said interlayer insulating film to form said trenches is formed at the intermediate portion of said interlayer insulating film, and said stopper insulating film is comprised of an SiCN film and an SiC film formed on said SiCN film.

7. A semiconductor device in which metal wiring is formed in trenches formed in an interlayer insulating film on a semiconductor substrate and a cap insulating film for preventing the diffusion of the metal which constitutes said wiring is formed over each of said interlayer insulating film and said metal wiring,

wherein said interlayer insulating film is comprised of an SIOC film and an SiON film formed on said SiOC film, and

said cap insulating film is comprised of an SiCN film and an SiC film formed on said SiCN film.

8. The semiconductor device according to claim 7,

wherein said SiON film which constitutes a part of said interlayer insulating film has the nitrogen content of 3 to 4 atoms % or less.

9. The semiconductor device according to claim 7, wherein said SiON film which constitutes a part of said interlayer insulating film has a diffraction ratio of 1.485 or less.

10. The semiconductor device according to claim 7,

wherein a stopper insulating film functioning as an etching stopper when etching said interlayer insulating film to form said trenches is formed at the intermediate portion of said interlayer insulating film, and said stopper insulating film is comprised of an SiCN film and an SiC film formed on said SiCN film.

11. A semiconductor device in which metal wiring is formed in trenches formed in an interlayer insulating film on a semiconductor substrate and a cap insulating film for preventing the diffusion of the metal which constitutes said wiring is formed over each of said interlayer insulating film and said metal wiring,

wherein said interlayer insulating film is comprised of an SiOC film and an SiOCN film formed on said SiOC film, and said cap insulating film is comprised of an SiCN film and an SiC film formed on said SiCN film.

12. The semiconductor device according to claim 11,

wherein said SiOC film which constitutes a part of said interlayer insulating film is a film having the change in stress of 50 MPa or less in the temperature range from room temperature to 450°

C.

13. The semiconductor device according to claim 11,

wherein said SiOCN film which constitutes a part of said interlayer insulating film has the nitrogen content of 10 atoms % or less.

14. The semiconductor device according to claim 11,

wherein a stopper insulating film functioning as an etching stopper when etching said interlayer insulating film to form said trenches is formed at the intermediate portion of said interlayer insulating film, and said stopper insulating film is comprised of an SiCN film and an SiC film formed on said SiCN film.

15. A semiconductor device in which metal wiring is formed in trenches formed in an interlayer insulating film on a semiconductor substrate and a cap insulating film for preventing the diffusion of the metal which constitutes said wiring is formed over each of said interlayer insulating film and said metal wiring,

wherein said interlayer insulating film is comprised of an SiOCN film, and

said cap insulating film is comprised of an SiCN film and an SiC film formed on said SiCN film.

16. The semiconductor device according to claim 15,

wherein said interlayer insulating film is comprised of an SiOCN film and an SiON film formed on said SiOCN film.

17. The semiconductor device according to claim 15,

wherein said SiOCN film which constitutes said interlayer insulating film has the nitrogen content of 10 atoms % or less.

18. The semiconductor device according to claim 15,

wherein a stopper insulating film functioning as an etching stopper when etching said interlayer insulating film to form said trenches is formed at the intermediate portion of said interlayer insulating film, and said stopper insulating film is comprised of an SiCN film and an SiC film formed on said SiCN film.

19. A manufacturing method of a semiconductor device in which metal wiring is formed in trenches formed in an interlayer insulating film on a semiconductor substrate and a cap insulating film for preventing the diffusion of the metal which constitutes said wiring is formed over each of said interlayer insulating film and said metal wiring,

said interlayer insulating film is comprised of an SiOC film and an SiON film formed on said SiOC film, and said cap insulating film is comprised of an SiCN film and an SiC film formed on said SiCN film,

wherein, after forming said SiOC film which constitutes a part of said interlayer insulating film, the plasma treatment is performed to the surface of said SiOC film, and then, said SiON film is formed on said SiOC film.

20. The manufacturing method of a semiconductor device according to claim 19,

wherein said SIOC film which constitutes a part of said interlayer insulating film is deposited by the plasma CVD method at the temperature of 375°

C.

21. The manufacturing method of a semiconductor device according to claim 19,

wherein said SiOC film which constitutes a part of said interlayer insulating film is deposited by the plasma CVD method so that the change in stress of the film is set to 50 MPa or less in the temperature range from the room temperature to 450°

C.