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Semiconductor device and manufacturing method thereof

  • US 20040192032A1
  • Filed: 10/15/2003
  • Published: 09/30/2004
  • Est. Priority Date: 10/17/2002
  • Status: Active Grant
First Claim
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1. A manufacturing method of a semiconductor device in which wiring made of metal is formed of a single layer structure or a multilayer structure, wherein an interlayer insulating film for electrically isolating the wirings from each other located above and below or side by side is formed of an SiOC film, and an insulating film having the difference in Young'"'"'s modulus from said SiOC film of 50 GPa or less or the difference in stress from said SiOC film of 50 MPa or less is formed so as to come into contact with said SiOC film.

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