Super lattice modification of overlying transistor
First Claim
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1. A device comprising:
- a substrate;
a buffer region positioned upon said substrate, wherein said buffer region comprises an upper buffer region and a lower buffer region;
a heteroj unction region positioned upon said buffer region; and
a superlattice positioned between said lower buffer region and said upper buffer region, wherein said superlattice comprises individual layers of GaN and AlxGa1-xN, wherein said device is configured to function as a heterojunction field effect transistor.
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Abstract
The invention provides a device having a substrate, a buffer region positioned upon the substrate, wherein the buffer region has an upper buffer region and a lower buffer region, a heterojunction region positioned upon the buffer region, and a superlattice positioned between the lower buffer region and the upper buffer region, wherein the device is configured to function as a heterojunction field effect transistor.
112 Citations
30 Claims
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1. A device comprising:
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a substrate;
a buffer region positioned upon said substrate, wherein said buffer region comprises an upper buffer region and a lower buffer region;
a heteroj unction region positioned upon said buffer region; and
a superlattice positioned between said lower buffer region and said upper buffer region, wherein said superlattice comprises individual layers of GaN and AlxGa1-xN, wherein said device is configured to function as a heterojunction field effect transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A device comprising:
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a substrate comprising sapphire;
a buffer region positioned upon said substrate, wherein said buffer region comprises an upper buffer region and a lower buffer region;
a heterojunction region positioned upon said buffer region; and
a superlattice positioned between said lower buffer region and said upper buffer region, wherein said superlattice comprises individual layers of GaN and AlxGa1-xN., wherein said device is configured to function as a heterojunction field effect transistor. - View Dependent Claims (18, 19, 20, 21, 22, 23)
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24. A device comprising:
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a substrate comprising silicon carbide;
a buffer region positioned upon said substrate, wherein said buffer region comprises an upper buffer region and a lower buffer region;
a heterojunction region positioned upon said buffer region; and
a superlattice positioned between said lower buffer region and said upper buffer region, wherein said superlattice comprises individual layers of GaN and AlxGa1-xN., wherein said device is configured to function as a heterojunction field effect transistor. - View Dependent Claims (25, 26, 27, 28, 29, 30)
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Specification