Semiconductor device

• US 20040195572A1
• Filed: 02/11/2004
• Published: 10/07/2004
• Est. Priority Date: 02/12/2003
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kato, Kiyoshi, Goto, Yuugo, Ohno, Yumiko, Takayama, Toru, Maruyama, Junya
• Granted Patent: US 7,459,726 B2
• Time in Patent Office: Days
• US Class Current: 257/72
• CPC Class Codes: H01L 21/8221 Three dimensional integrated circuits stacked in different levels
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H10K 59/32 Stacked devices having two or more layers, each emitting at different wavelengths
• CPC Class Codes: H10K 59/60 OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes

Abstract

A semiconductor device which has a high performance integrated circuit formed of an inexpensive glass substrate and capable of processing a large amount of information and operating at higher data rates. The semiconductor device includes semiconductor elements stacked by transferring a semiconductor element formed on a different substrate. A resin film is formed between the stacked semiconductor elements and a metal oxide film is partially formed between the stacked semiconductor elements as well. A first electric signal is converted to an optical signal in a light emitting element electrically connected to one of the stacked semiconductor elements. Meanwhile, the optical signal is converted to a second electric signal in a light receiving element electrically connected to another one of the stacked semiconductor elements.

Claims

1. A semiconductor device comprising:

stacked semiconductor elements;

a resin film formed between the stacked semiconductor elements; and

at least one of a light emitting element and a light receiving element electrically connected to each of the stacked semiconductor elements,

wherein a signal is transmitted and received between the stacked semiconductor elements by using the light emitting element and the light receiving element.

11. A mobile phone having the semiconductor device according to any one of claims 1 to 10.

12. An electronic book having the semiconductor device according to any one of claims 1 to 10.

13. A personal computer having the semiconductor device according to any one of claims 1 to 10.

14. An electronic card having the semiconductor device according to any one of claim 1 to 10.

15. A watch card having the semiconductor device according to any one of claim 1 to 10.

2. A semiconductor device comprising:

stacked semiconductor elements;

a resin film formed between the stacked semiconductor elements;

a metal oxide partially formed between the stacked semiconductor elements; and

at least one of a light emitting element and a light receiving element electrically connected to each of the stacked semiconductor elements,

wherein a signal is transmitted and received between the stacked semiconductor elements by using the light emitting element and the light receiving element.

3. A semiconductor device comprising:

stacked semiconductor elements;

a resin film formed between the stacked semiconductor elements;

a light emitting element electrically connected to one of the stacked semiconductor element; and

a light receiving element electrically connected to another one of the stacked semiconductor element,

wherein a first electric signal is converted to an optical signal in the light emitting element,

wherein the optical signal is converted to a second electric signal in the light receiving element.

4. A semiconductor device comprising:

stacked semiconductor elements;

a resin film formed between the stacked semiconductor elements;

a metal oxide partially formed between the stacked semiconductor elements;

a light emitting element electrically connected to one of the stacked semiconductor elements; and

a light receiving element electrically connected to another one of the stacked semiconductor elements,

wherein a first electric signal is converted to an optical signal in the light emitting element,

wherein the optical signal is converted to a second electric signal in the light receiving element.

5. A semiconductor device comprising:

semiconductor elements stacked by transferring a semiconductor element formed over a different substrate;

a resin film formed between the stacked semiconductor elements;

a light emitting element electrically connected to one of the stacked semiconductor elements; and

a light receiving element electrically connected to another one of the stacked semiconductor elements

wherein a first electric signal is converted to an optical signal in the light emitting element,

wherein the optical signal is converted to a second electric signal in the light receiving element.

6. A semiconductor device comprising:

semiconductor elements stacked by transferring a semiconductor element formed over a different substrate;

a resin film formed between the stacked semiconductor elements;

a metal oxide partially formed between the stacked semiconductor elements;

a light emitting element electrically connected to one of the stacked semiconductor elements; and

a light receiving element electrically connected to another one of the stacked semiconductor elements,

wherein a first electric signal is converted to an optical signal in the light emitting element,

wherein the optical signal is converted to a second electric signal in the light receiving element.

7. A semiconductor device formed by detaching a plurality of semiconductor elements each formed over a plurality of substrates and by stacking the detached plurality of semiconductor elements over an element substrate, comprising:

a resin film formed between the plurality of stacked semiconductor elements;

a light emitting element electrically connected to one of the plurality of semiconductor elements; and

a light receiving element electrically connected to another one of the plurality of semiconductor elements,

wherein a first electric signal is converted to an optical signal in the light emitting element,

wherein the optical signal is converted to a second electric signal in the light receiving element.

8. A semiconductor device formed by detaching a plurality of semiconductor elements each formed over a plurality of substrates and by stacking the detached plurality of semiconductor elements over an element substrate, comprising:

a resin film formed between the plurality of stacked semiconductor elements;

a metal oxide partially formed between the plurality of stacked semiconductor elements;

a light emitting element electrically connected to one of the plurality of semiconductor elements; and

a light receiving element electrically connected to another one of the plurality of semiconductor elements,

wherein a first electric signal is converted to an optical signal in the light emitting element,

wherein the optical signal is converted to a second electric signal in the light receiving element.

9. A semiconductor device comprising:

a plurality of stacked thin film integrated circuits attached to each other with a resin;

a light emitting element electrically connected to one of the stacked thin film integrated circuits; and

a light receiving element electrically connected to another one of the stacked thin film integrated circuits,

wherein a first electric signal is converted to an optical signal in the light emitting element,

wherein the optical signal is converted to a second electric signal in the light receiving element.

10. A semiconductor device comprising:

a plurality of stacked thin film integrated circuits attached to each other with a resin;

a metal oxide partially formed on either surface of each of the stacked thin film integrated circuits;

a light emitting element electrically connected to one of the stacked thin film integrated circuits; and

a light receiving element electrically connected to another one of the stacked thin film integrated circuits,

wherein a first electric signal is converted to an optical signal in the light emitting element,

wherein the optical signal is converted to a second electric signal in the light receiving element.