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Strained silicon fin field effect transistor

  • US 20040195624A1
  • Filed: 02/24/2004
  • Published: 10/07/2004
  • Est. Priority Date: 04/04/2003
  • Status: Abandoned Application
First Claim
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1. A strained Silicon FinFET (Fin Field Effect Transistor), comprising:

  • a substrate;

    a strained silicon in a shape of a fin island located on said substrate;

    a semiconductor embedded in said strained silicon;

    a dielectric layer formed on a surface of an intermediate section of said strained silicon; and

    electrodes formed on said fin island and said dielectric layer.

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