Magnetic layer processing

• US 20040195647A1
• Filed: 04/16/2004
• Published: 10/07/2004
• Est. Priority Date: 11/23/1999
• Status: Active Grant

• Current Assignee: Ankur Mohan Crawford, Donald S. Gardner
• Original Assignee: Ankur Mohan Crawford, Donald S. Gardner
• Inventors: Gardner, Donald S., Crawford, Ankur Mohan
• Granted Patent: US 6,940,147 B2
• Time in Patent Office: Days
• US Class Current: 257/528
• CPC Class Codes: H01F 17/0006 Printed inductances printed coils for dynamo-electric machines H02K3/26; printed circuits H05K
• CPC Class Codes: H01F 2017/0046 with a conductive path having a bridge
• CPC Class Codes: H01F 41/042 by thin film techniques
• CPC Class Codes: H01F 41/046 structurally combined with ferromagnetic material
• CPC Class Codes: H01L 23/522 including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/552 Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 23/645 Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 27/08 including only semiconductor components of a single kind
• CPC Class Codes: H01L 28/10 Inductors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10T 428/32 Composite [nonstructural laminate] of inorganic material having metal-compound-containing layer and having defined magnetic layer

Abstract

A dielectric layer is formed over a substrate comprising a semiconductor material. A magnetic layer is formed over the dielectric layer. The magnetic layer comprises an amorphous alloy comprising cobalt.

Claims

1. An apparatus comprising:

a substrate comprising a semiconductor material;

a dielectric layer over the substrate; and

a magnetic layer over the dielectric layer, the magnetic layer comprising an amorphous alloy comprising cobalt.

2. The apparatus of claim 1, wherein the amorphous alloy comprises cobalt and zirconium.

3. The apparatus of claim 2, wherein the amorphous alloy comprises approximately 3 atomic percent to approximately 10 atomic percent zirconium.

4. The apparatus of claim 1, wherein the amorphous alloy comprises cobalt, zirconium, and tantalum.

5. The apparatus of claim 4, wherein the amorphous alloy comprises approximately 3 atomic percent to approximately 10 atomic percent zirconium and up to and including approximately 10 atomic percent tantalum.

6. The apparatus of claim 5, wherein the amorphous alloy comprises approximately 4 atomic percent zirconium and approximately 4.5 atomic percent tantalum.

7. The apparatus of claim 1, wherein the amorphous alloy comprises cobalt, zirconium, and niobium.

8. The apparatus of claim 1, wherein the amorphous alloy comprises cobalt, zirconium, and a rare earth element.

9. The apparatus of claim 8, wherein the amorphous alloy comprises cobalt;

zirconium; and

rhenium, neodymium, praseodymium, or dysprosium.

10. The apparatus of claim 8, wherein the amorphous alloy comprises approximately 3 atomic percent to approximately 10 atomic percent zirconium and up to and including approximately 3 atomic percent rhenium.

11. The apparatus of claim 1, wherein the magnetic layer comprises an underlying adhesion layer.

12. The apparatus of claim 11, wherein the underlying adhesion layer comprises titanium.

13. The apparatus of claim 1, wherein the magnetic layer comprises an overlying adhesion layer.

14. The apparatus of claim 13, wherein the overlying adhesion layer comprises titanium or cobalt oxide.

15. The apparatus of claim 1, wherein the magnetic layer is patterned.