Metal ball attachment of heat dissipation devices

• US 20040196634A1
• Filed: 04/02/2003
• Published: 10/07/2004
• Est. Priority Date: 04/02/2003
• Status: Active Grant

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Winton, Jeffery S., Rumer, Christopher L., Mallik, Debendra, Berry, Michele J.
• Granted Patent: US 6,992,891 B2
• Time in Patent Office: Days
• US Class Current: 361/704
• CPC Class Codes: H01L 21/563 Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04026 Bonding areas specifically adapted for layer connectors
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73253 Bump and layer connectors
• CPC Class Codes: H01L 23/36 Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks H01L23/28, H01L23/40, H01L23/42, H01L23/44, H01L23/46 take precedence; heating H01L23/345
• CPC Class Codes: H01L 23/38 Cooling arrangements using the Peltier effect
• CPC Class Codes: H01L 23/427 Cooling by change of state, e.g. use of heat pipes by liquefied gas H01L23/445
• CPC Class Codes: H01L 23/473 by flowing liquids H01L23/4332, H01L23/4338 take precedence
• CPC Class Codes: H01L 25/0655 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/15311 being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/15312 being a pin array, e.g. PGA
• CPC Class Codes: H01L 2924/16152 Cap comprising a cavity for hosting the device, e.g. U-shaped cap

Abstract

An assembly including a heat dissipation device having an attachment surface, a substrate having an attachment surface, and a plurality of metal balls extending between the heat dissipation device attachment surface and the substrate attachment surface. The assembly may include at least one microelectronic die disposed between the heat dissipation device attachment surface and the substrate attachment surface.

Claims

1. A microelectronic device assembly, comprising:

a heat dissipation device having an attachment surface;

a substrate having an attachment surface;

at least one microelectronic die disposed between said heat dissipation device attachment surface and said substrate attachment surface; and

a plurality of metal balls extending between said heat dissipation device attachment surface and said substrate attachment surface.

2. The microelectronic device assembly of claim 1, further comprising a thermal interface material disposed between said heat dissipation and a back surface of said at least one microelectronic die.

3. The microelectronic device assembly of claim 1, further comprising an active surface of said at least one microelectronic die in electrical contact with said substrate attachment surface.

4. The microelectronic device assembly of claim 1, wherein at least one of said plurality of metal balls contacts at least one wetting layer on said heat dissipation device active surface.

5. The microelectronic device assembly of claim 1, wherein at least one of said plurality of metal balls contacts at least one land on said substrate attachment surface.

6. The microelectronic device assembly of claim 1, wherein said plurality of metal balls comprise lead, tin, indium, gallium, bismuth, cadmium, zinc, copper, gold, silver, antimony, germanium, and alloys thereof.

7. The microelectronic device assembly of claim 1, further comprising a plurality of external contacts disposed on an external contact surface of said substrate.

8. The microelectronic device assembly of claim 1, wherein said heat dissipation device comprises a heat pipe.

9. The microelectronic device assembly of claim 1, wherein said heat dissipation device further comprises a plurality of thermally conductive projections extending therefrom.

10. An electromagnetic interference dampener, comprising:

a heat dissipation device having an attachment surface;

a substrate having an attachment surface; and

a plurality of metal balls extending between said heat dissipation device attachment surface and said substrate attachment surface.

11. The microelectronic device assembly of claim 10, wherein at least one of said plurality of metal balls contacts at least one wetting layer on said heat dissipation device active surface.

12. The microelectronic device assembly of claim 10, wherein at least one of said plurality of metal balls contacts at least one land on said substrate attachment surface.

13. The microelectronic device assembly of claim 10, wherein said plurality of metal balls comprise lead, tin, indium, gallium, bismuth, cadmium, zinc, copper, gold, silver, antimony, germanium, and alloys thereof.

14. A multichip module, comprising:

a heat dissipation device having an attachment surface;

a substrate having an attachment surface;

a plurality of microelectronic dice disposed between said heat dissipation device attachment surface and said substrate attachment surface; and

a plurality of metal balls extending between said heat dissipation device attachment surface and said substrate attachment surface.

15. The multichip module of claim 14, wherein at least one of said plurality of metal balls is positioned between at least two of said plurality of microelectronic dice.

16. The multichip module of claim 14, further comprising a thermal interface material disposed between said heat dissipation and a back surface of at least one of said plurality of microelectronic dice.

17. The multichip module of claim 14, further comprising an active surface of said at least one microelectronic die in electrical contact with said substrate attachment surface.

18. The multichip module of claim 14, wherein at least one of said plurality of metal balls contacts at least one wetting layer on said heat dissipation device active surface.

19. The multichip module of claim 14, wherein at least one of said plurality of metal balls contacts at least one land on said substrate attachment surface.

20. The multichip module of claim 14, wherein said plurality of metal balls comprise lead, tin, indium, gallium, bismuth, cadmium, zinc, copper, gold, silver, antimony, germanium, and alloys thereof.

21. The multichip module of claim 14, further comprising a plurality of external contacts disposed on an external contact surface of said substrate.

22. The multichip module of claim 14, wherein said heat dissipation device comprises a heat pipe.

23. The multichip module of claim 14, wherein said heat dissipation device further comprises a plurality of thermally conductive projections extending therefrom.

24. A method for fabricating a microelectronic device assembly, comprising:

providing a heat dissipation device having an attachment surface;

providing a substrate having an attachment surface;

disposing at least one microelectronic die between said heat dissipation device attachment surface and said substrate attachment surface; and

disposing a plurality of metal balls between said heat dissipation device attachment surface and said substrate attachment surface.

25. The method of claim 24, further comprising disposing a thermal interface material between said heat dissipation and a back surface of said at least one microelectronic die.

26. The method of claim 24, further comprising forming an electrical contact between an active surface of said at least one microelectronic die in electrical and said substrate attachment surface.

27. The method of claim 24, further comprising contacting at least one of said plurality of metal balls with at least one wetting layer on said heat dissipation device active surface.

28. The method of claim 24, further comprising contacting at least one of said plurality of metal balls with at least one land on said substrate attachment surface.