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Method of forming silicon oxide film and forming apparatus thereof

  • US 20040198071A1
  • Filed: 04/27/2004
  • Published: 10/07/2004
  • Est. Priority Date: 07/12/2000
  • Status: Active Grant
First Claim
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1. A method of forming a silicon oxide film on a substrate by the use of vapor phase chemical reaction using a plasma CVD method, comprising the steps of:

  • separating a plasma generating region from a deposition region which includes excitation oxygen molecules and excitation oxygen atoms, plasma of first gas containing oxygen atoms being formed in the plasma generating region while second gas containing silicon atoms being supplied into the deposition region; and

    intentionally controlling first quantity of the excitation oxygen molecules and second quantity of the excitation oxygen atoms.

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