Method of forming silicon oxide film and forming apparatus thereof
First Claim
1. A method of forming a silicon oxide film on a substrate by the use of vapor phase chemical reaction using a plasma CVD method, comprising the steps of:
- separating a plasma generating region from a deposition region which includes excitation oxygen molecules and excitation oxygen atoms, plasma of first gas containing oxygen atoms being formed in the plasma generating region while second gas containing silicon atoms being supplied into the deposition region; and
intentionally controlling first quantity of the excitation oxygen molecules and second quantity of the excitation oxygen atoms.
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Abstract
In a method of forming a silicon oxide film, the silicon oxide film is formed on a substrate by the use of a plasma CVD method. A plasma-generating region is separated from a deposition region which includes excitation oxygen molecules and excitation oxygen atoms. Plasma of first gas containing oxygen atoms is formed in the plasma-generating region while second gas containing silicon atoms is supplied into the deposition region. First quantity of the excitation oxygen molecules and second quantity of the excitation oxygen atoms are controlled intentionally.
99 Citations
14 Claims
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1. A method of forming a silicon oxide film on a substrate by the use of vapor phase chemical reaction using a plasma CVD method, comprising the steps of:
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separating a plasma generating region from a deposition region which includes excitation oxygen molecules and excitation oxygen atoms, plasma of first gas containing oxygen atoms being formed in the plasma generating region while second gas containing silicon atoms being supplied into the deposition region; and
intentionally controlling first quantity of the excitation oxygen molecules and second quantity of the excitation oxygen atoms. - View Dependent Claims (2, 3, 4, 5, 6)
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7-12. -12. (Cancelled)
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13. A method of forming a silicon oxide film on a substrate by the use of vapor phase chemical reaction using a plasma CVD method, comprising the steps of:
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separating a plasma generating region from a deposition region which includes excitation oxygen molecules and excitation oxygen atoms, plasma of first gas containing oxygen atoms being formed in the plasma generating region while second gas containing silicon atoms being supplied into the deposition region; and
intentionally controlling first emission intensity of the excitation oxygen molecules and second emission intensity of the excitation oxygen atoms. - View Dependent Claims (14)
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Specification