Semiconductor device and method of fabricating same
First Claim
1. A semiconductor device having a Silicon-On-Insulator structure which includes a semiconductor layer formed on an insulator, and having at least one Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) element, the MOSFET element comprising:
- a source region;
a drain region which is opposed to said source region;
a body region disposed between said source region and said drain region;
a gate region positioned on or close to a surface of said body region, so as to form an electrically conducting channel in said body region; and
an extracting region being in contact with both of said body region and said source region, said extracting region having a conductivity type which is the same as a conductivity type of said body region and having a concentration higher than that of said body region.
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Accused Products
Abstract
A semiconductor device and a method of fabricating the same suppress a substrate floating effect without causing lowering of a degree of integration. The semiconductor device has a Silicon-On-Insulator structure which includes a semiconductor layer formed on an insulator, and has at least one MOSFET element. The MOSFET element comprises a source region; a drain region which is opposed to the source region; a body region disposed between the source and drain regions; a gate region positioned on or close to a surface of the body region, so as to form an electrically conducting channel in the body region; and an extracting region being in contact with both of the body region and the source region. The extracting region has a conductivity type which is the same as a conductivity type of the body region and has a concentration higher than that of the body region.
53 Citations
10 Claims
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1. A semiconductor device having a Silicon-On-Insulator structure which includes a semiconductor layer formed on an insulator, and having at least one Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) element, the MOSFET element comprising:
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a source region;
a drain region which is opposed to said source region;
a body region disposed between said source region and said drain region;
a gate region positioned on or close to a surface of said body region, so as to form an electrically conducting channel in said body region; and
an extracting region being in contact with both of said body region and said source region, said extracting region having a conductivity type which is the same as a conductivity type of said body region and having a concentration higher than that of said body region. - View Dependent Claims (2, 3, 4)
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5. A method of fabricating a semiconductor device having a Silicon-On-Insulator structure which includes a semiconductor layer formed on an insulator, and having at least one Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) element,
wherein said MOSFET element comprises a source region; - a drain region which is opposed to said source region;
a body region disposed between said source region and said drain region; and
a gate region positioned on or close to a surface of said body region, so as to form an electrically conducting channel in said body region,said method comprises the step of introducing impurities using a mask covering an area above said drain region to form an extracting region being in contact with both of said body region and said source region, said extracting region having a conductivity type which is the same as a conductivity type of said body region and having a concentration higher than that of said body region. - View Dependent Claims (6, 7)
- a drain region which is opposed to said source region;
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8. A method of fabricating a semiconductor device having a Silicon-On-Insulator structure which includes a semiconductor layer formed on an insulator, and having at least one Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) element,
wherein said MOSFET element comprises a source region; - a drain region which is opposed to said source region;
a body region disposed between said source region and said drain region; and
a gate region positioned on or close to a surface of said body region, so as to form an electrically conducting channel in said body region,said method comprises the step of introducing impurities by an oblique ion implantation using said gate region as a mask to form an extracting region being in contact with both of said body region and said source region, said extracting region having a conductivity type which is the same as a conductivity type of said body region and having a concentration higher than that of said body region. - View Dependent Claims (9, 10)
- a drain region which is opposed to said source region;
Specification