Liquid crystal display device and method of fabricating the same

• US 20040201800A1
• Filed: 03/26/2004
• Published: 10/14/2004
• Est. Priority Date: 04/08/2003
• Status: Active Grant

• Current Assignee: LG Display Co., Ltd.
• Original Assignee: LG Philips LCD Company Limited (LG Display Co., Ltd.)
• Inventors: Jeong, Woo-Nam, Jin, Hyun-Suk
• Granted Patent: US 7,164,456 B2
• Time in Patent Office: Days
• US Class Current: 349/113
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/136209 Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G02F 2201/40 Arrangements for improving the aperture ratio

Abstract

A liquid crystal display device includes first and second substrates facing and spaced apart from each other, a gate line and a data line on an inner surface of the first substrate, a thin film transistor connected to the gate line and the data line, a passivation layer on the thin film transistor, a pixel electrode on the passivation layer, an organic insulating film on the pixel electrode corresponding to the data line, a reflective electrode on the organic insulating film and connected to the pixel electrode, a black matrix on an inner surface of the second substrate corresponding to the thin film transistor, a common electrode over the black matrix, and a liquid crystal layer between the reflective electrode and the common electrode.

Claims

1. A liquid crystal display device, comprising:

first and second substrates facing and spaced apart from each other;

a gate line and a data line on an inner surface of the first substrate;

a thin film transistor connected to the gate line and the data line;

a passivation layer on the thin film transistor;

a pixel electrode on the passivation layer;

an organic insulating film on the pixel electrode corresponding to the data line;

a reflective electrode on the organic insulating film and connected to the pixel electrode;

a black matrix on an inner surface of the second substrate corresponding to the thin film transistor;

a common electrode over the black matrix; and

a liquid crystal layer between the reflective electrode and the common electrode.

2. The device according to claim 1, wherein a width of the reflective electrode is greater than a thickness of the data line, and the reflective electrode covers the data line.

3. The device according to claim 1, wherein the organic insulating film and the reflective electrode cover the gate line.

4. The device according to claim 1, wherein a first thickness of the liquid crystal layer corresponding to the pixel electrode is greater than a second thickness of the liquid crystal layer corresponding to the reflective electrode.

5. The device according to claim 4, wherein the first thickness is substantially twice as much as the second thickness.

6. The device according to claim 1, wherein the organic insulating layer is formed of the same material as the passivation layer.

7. The device according to claim 1, wherein the pixel electrode is formed of one of indium-tin-oxide (ITO) and indium-zinc-oxide (IZO).

8. The device according to claim 1, further comprising a backlight unit under the first substrate.

9. The device according to claim 8, further comprising a first polarizing plate on an outer surface of the first substrate and a second polarizing plate on an outer surface of the second substrate.

10. The device according to claim 9, further comprising a first optical film between the first substrate and the first polarizing plate and a second optical film between the second substrate and the second polarizing plate.

11. The device according to claim 1, further comprising a color filter layer between the black matrix and the common electrode.

12. The device according to claim 11, further comprising an overcoat layer between the color filter layer and the common electrode.

13. The device according to claim 1, further comprising a color filter layer on the pixel electrode and the reflective electrode.

14. The device according to claim 13, wherein a first thickness of the color filter layer corresponding to the pixel electrode is greater than a second thickness of the color filter layer corresponding to the reflective electrode.

15. The device according to claim 1, wherein the pixel electrode overlaps the data line.

16. A liquid crystal display device, comprising:

first and second substrates facing and spaced apart from each other;

a gate line and a data line on an inner surface of the first substrate;

a thin film transistor connected to the gate line and the data line;

a passivation layer on the thin film transistor;

a pixel electrode on the passivation layer;

an organic insulating film on the pixel electrode corresponding to the data line and the thin film transistor;

a reflective electrode on the organic insulating film and connected to the pixel electrode;

a common electrode over an inner surface of the second substrate; and

a liquid crystal layer between the reflective electrode and the common electrode.

17. The device according to claim 16, wherein a width of the reflective electrode is greater than a thickness of the data line and the reflective electrode covers the data line.

18. The device according to claim 16, wherein the organic insulating film and the reflective electrode cover the gate line.

19. The device according to claim 16, wherein a first thickness of the liquid crystal layer corresponding to the pixel electrode is greater than a second thickness of the liquid crystal layer corresponding to the reflective electrode.

20. The device according to claim 19, wherein the first thickness is substantially twice as much as the second thickness.

21. The device according to claim 16, wherein the organic insulating layer is formed of the same material as the passivation layer.

22. The device according to claim 16, wherein the pixel electrode is formed of one of indium-tin-oxide (ITO) and indium-zinc-oxide (IZO).

23. The device according to claim 16, further comprising a backlight unit under the first substrate.

24. The device according to claim 23, further comprising a first polarizing plate on an outer surface of the first substrate and a second polarizing plate on an outer surface of the second substrate.

25. The device according to claim 24, further comprising a first optical film between the first substrate and the first polarizing plate and a second optical film between the second substrate and the second polarizing plate.

26. The device according to claim 16, further comprising a color filter layer between the second substrate and the common electrode.

27. The device according to claim 26, further comprising an overcoat layer between the color filter layer and the common electrode.

28. The device according to claim 16, further comprising a color filter layer on the pixel electrode and the reflective electrode.

29. The device according to claim 28, wherein a first thickness of the color filter layer corresponding to the pixel electrode is greater than a second thickness of the color filter layer corresponding to the reflective electrode.

30. The device according to claim 16, wherein the pixel electrode overlaps the data line.

31. A method of fabricating a liquid crystal display device, comprising:

forming a gate line and a data line on an inner surface of a first substrate;

forming a thin film transistor on the first substrate connected to the gate line and the data line;

forming a passivation layer on the thin film transistor;

forming a pixel electrode on the passivation layer;

forming an organic insulating film on the pixel electrode corresponding to the data line;

forming a reflective electrode on the organic insulating film and connected to the pixel electrode;

forming a black matrix on an inner surface of a second substrate corresponding to the thin film transistor;

forming a common electrode over the black matrix;

providing the second substrate opposite to the first substrate; and

forming a liquid crystal layer between the reflective electrode and the common electrode.

32. The method according to claim 31, wherein a width of the reflective electrode is greater than a thickness of the data line, and the reflective electrode covers the data line.

33. The method according to claim 31, wherein the organic insulating film and the reflective electrode cover the gate line.

34. The method according to claim 31, wherein the organic insulating layer is formed of the same material as the passivation layer.

35. The method according to claim 31, further comprising forming a color filter layer on the pixel electrode and the reflective electrode.

36. The method according to claim 35, wherein a first thickness of the color filter layer corresponding to the pixel electrode is greater than a second thickness of the color filter layer corresponding to the reflective electrode.

37. The method according to claim 31, wherein the pixel electrode overlaps the data line.

38. A method of fabricating a liquid crystal display device, comprising:

forming a gate line and a data line on an inner surface of a first substrate;

forming a thin film transistor on the first substrate connected to the gate line and the data line;

forming a passivation layer on the thin film transistor;

forming a pixel electrode on the passivation layer;

forming an organic insulating film on the pixel electrode corresponding to the data line and the thin film transistor;

forming a reflective electrode on the organic insulating film and connected to the pixel electrode;

forming a common electrode over an inner surface of a second substrate;

providing the second substrate opposite to the first substrate; and

forming a liquid crystal layer between the reflective electrode and the common electrode.

39. The method according to claim 38, wherein a width of the reflective electrode is greater than a thickness of the data line and the reflective electrode covers the data line.

40. The method according to claim 38, wherein the organic insulating film and the reflective electrode cover the gate line.

41. The method according to claim 38, wherein the organic insulating layer is formed of the same material as the passivation layer.

42. The method according to claim 38, further comprising forming a color filter layer on the pixel electrode and the reflective electrode.

43. The method according to claim 42, wherein a first thickness of the color filter layer corresponding to the pixel electrode is greater than a second thickness of the color filter layer corresponding to the reflective electrode.

44. The method according to claim 38, wherein the pixel electrode overlaps the data line.