Antihalation compositions

• US 20040202959A1
• Filed: 04/26/2004
• Published: 10/14/2004
• Est. Priority Date: 11/15/1991
• Status: Active Grant

• Current Assignee: Shipley Company, LLC (Dow, Inc.)
• Original Assignee: Shipley Company, LLC (Dow, Inc.)
• Inventors: Thackeray, James W., Orsula, George W.
• Granted Patent: US 7,014,982 B2
• Time in Patent Office: Days
• US Class Current: 430/270.1
• CPC Class Codes: G03F 7/091 characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
• CPC Class Codes: G03F 7/38 Treatment before imagewise removal, e.g. prebaking G03F7/265 takes precedence

Abstract

Antihalation compositions and methods for reducing the reflection of exposure radiation of a photoresist overcoated said compositions. The antihalation compositions of the invention comprise a resin binder and material capable of causing a thermally induced crosslinking reaction of the resin binder.

Claims

1-35. -35. (canceled)

36. A coated substrate comprising:

a substrate having thereon;

a layer of a coating composition comprising a melamine material;

a layer of a photoresist composition above the coating composition comprising a melamine material.

37. The substrate of claim 36 wherein the coating composition comprising a melamine material is crosslinked.

38. The substrate of claim 36 wherein the coating composition comprises a thermal acid generator.

39. The substrate of claim 36 wherein the coating composition comprises an anthracene material.

40. The substrate of claim 36 wherein the substrate is a microelectronic wafer.

41. A method for forming a photoresist relief image comprising:

applying on a substrate a layer of a coating composition comprising a melamine material;

applying a layer of a photoresist composition above the coating composition comprising a melamine material.

42. The method of claim 41 wherein the coating composition comprising a melamine material is crosslinked.

43. The method of claim 41 wherein the coating composition comprises a thermal acid generator.

44. The method of claim 41 wherein the coating composition comprises an anthracene material.

45. The method of claim 41 wherein the substrate is a microelectronic wafer.

46. The method of claim 41 wherein the photoresist composition is imaged with activating radiation and the imaged photoresist composition is treated with a developer to provide a photoresist relief image.

47. The method of claim 46 wherein areas bared of photoresist upon treatment with the developer are etched.

48. The method of claim 46 wherein areas bared of photoresist upon treatment with the developer are exposed to plasma gas.