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Porous substrate for epitaxial growth, method for manufacturing same, and method for manufacturing III-nitride semiconductor substrate

  • US 20040206967A1
  • Filed: 04/12/2004
  • Published: 10/21/2004
  • Est. Priority Date: 04/15/2003
  • Status: Active Grant
First Claim
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1. A porous substrate for epitaxial growth, comprising:

  • an underlying layer made of III-nitride semiconductor;

    a void-formation preventive layer grown on the underlying layer;

    a porous III-nitride semiconductor layer; and

    a porous metallic layer grown on the porous III-nitride semiconductor layer.

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