Semiconductor switching device and method
6 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor switching device (10) is formed on a semiconductor substrate (12) having a trench (44) formed on one of its surfaces (42). A control electrode (32) activates a wall of the trench to form a conduction channel (36). A first conduction electrode (40) is disposed on the semiconductor substrate to have a first doped region (34) for receiving a current and a second doped region (24) for routing the current to the conduction channel.
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Citations
27 Claims
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1-11. -11. (canceled)
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12. A bidirectional switch, comprising:
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a semiconductor substrate having a first surface for forming a trench;
a control structure formed in the trench to enable a conduction channel in response to a control signal, and having a dielectric layer along a wall of the trench and a control electrode adjacent to the dielectric layer;
a first conduction electrode having a first layer formed at the first surface for receiving a current and a second layer underlying the first layer for coupling the current to the conduction channel, wherein the first layer is spaced a predefined distance from the control structure; and
a second conduction electrode disposed at a lower portion of the trench for receiving the current from the conduction channel. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27)
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16-20. -20. (canceled)
Specification