Semiconductor device and method of manufacturing the same
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Accused Products
Abstract
Gate electrodes (3) are formed on a semiconductor substrate (1), each with a gate insulating film (2) interposed therebetween. A pair of offset spacers (4) are respectively formed on opposite side faces of each of the gate insulating film (2) and the gate electrodes (3). Diffusion layers (5) are formed in the semiconductor substrate (1) on opposite sides of a portion of the semiconductor substrate (1) immediately under each of the gate electrodes (3), by ion implantation. While the gate electrodes (3) have various configurations such as a gate electrode having a rectangular section, an upwardly tapered gate electrode and a downwardly tapered gate electrode, respective configurations of the offset spacers (4) are adjusted so that lengths each obtained by adding the gate length of the gate electrode (3), which gate length extends on an interface between the gate insulating film (2) and the gate electrode (3), to a width of the pair of the offset spacers (4), which width extends on an interface between the offset spacers (4) and the semiconductor substrate (1), are substantially uniform.
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Citations
6 Claims
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1. (Canceled)
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2. A semiconductor device comprising:
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a plurality of gate electrode structures formed on a semiconductor substrate, each of which comprises;
a gate insulating film formed on said semiconductor substrate;
a gate electrode formed on said gate insulating film; and
an offset spacer formed on a side face of said gate electrode, wherein respective lengths of said plurality of gate electrode structures are substantially uniform with one another, each of said lengths being defined as a sum of a gate length extending on an interface between said gate insulating film and said gate electrode, and a width of said offset spacer extending on an interface between said offset spacer and said semiconductor substrate, and said plurality of gate electrode structures include a first gate electrode having a rectangular section, a second gate electrode having a upwardly tapered section, and a third gate electrode having a downwardly tapered section. - View Dependent Claims (3)
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4. A method of manufacturing a semiconductor device comprising the steps of:
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(a) forming gate electrodes on a semiconductor substrate, each with a gate insulating film interposed therebetween;
(b) forming an insulating film on said gate electrodes by CVD;
(c) implanting an impurity into an entire surface of said insulating film;
(d) carrying out wet etching on said insulating film having said impurity implanted thereinto;
(e) carrying out anisotropic dry etching on said insulating film provided after said step (d), to form an offset spacer; and
(f) measuring a gate length of each of said gate electrodes after said step (a), wherein said steps (b), (d) and (e) are modified based on a result of measurement provided by said step (f). - View Dependent Claims (5, 6)
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Specification