Manufacturing method for liquid crystal display panels having high aperture ratio
First Claim
1. A manufacturing method for liquid crystal display panels having a high aperture ratio, comprising the steps of:
- providing a transparent substrate with thin film transistors forming therein, and the periphery of the transparent substrate having an outer lead bonding area formed by covering an insulation layer over metal wires;
forming a protection layer over the thin film transistors of the transparent substrate and outer lead bonding area;
applying a photo-etching process by a half-tone mask to the protection layer so as to remove a part of the protection layer at the outer lead bonding area for exposing the insulation layer on which outer lead bonding pads are predefinedly located; and
etching the remaining protection layer and the exposed insulation layer for exposing upper portions of the insulation layer and generating via holes through the insulation layer so as to expose the metal wires.
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Accused Products
Abstract
A protection layer is formed on a transparent substrate having a plurality of thin film transistors, and an exposure step is then carried out by means of a half-tone mask. An outer lead bonding area is located on the periphery of the transparent substrate. After the exposure and development steps, most of the protection layer in the outer lead bonding area is removed. With an etching step, the top of an insulation layer of the outer lead bonding area is exposed and a plurality of via holes are formed in the insulation layer, thus a metal layer is exposed from the via holes as outer lead bonding pads. Finally, a transparent conductive layer with desired patterns is formed on the protection layer, and the transparent conductive layer is extended into the via holes of the protection layer to connect with the thin film transistors.
10 Citations
11 Claims
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1. A manufacturing method for liquid crystal display panels having a high aperture ratio, comprising the steps of:
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providing a transparent substrate with thin film transistors forming therein, and the periphery of the transparent substrate having an outer lead bonding area formed by covering an insulation layer over metal wires;
forming a protection layer over the thin film transistors of the transparent substrate and outer lead bonding area;
applying a photo-etching process by a half-tone mask to the protection layer so as to remove a part of the protection layer at the outer lead bonding area for exposing the insulation layer on which outer lead bonding pads are predefinedly located; and
etching the remaining protection layer and the exposed insulation layer for exposing upper portions of the insulation layer and generating via holes through the insulation layer so as to expose the metal wires. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification