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III group nitride based semiconductor element and method for manufacture thereof

  • US 20040209390A1
  • Filed: 12/04/2003
  • Published: 10/21/2004
  • Est. Priority Date: 06/06/2001
  • Status: Active Grant
First Claim
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1. A method of producing a Group III nitride compound semiconductor device, comprising steps of:

  • forming a separator layer on an auxiliary substrate;

    forming an undercoat layer on said separator layer;

    forming a thermal spray depositing layer on said undercoat layer;

    separating said separator layer from said undercoat layer; and

    forming a Group III nitride compound semiconductor layer on a surface of said undercoat layer opposite to a surface on which said thermal spray depositing layer is formed.

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