III group nitride based semiconductor element and method for manufacture thereof
First Claim
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1. A method of producing a Group III nitride compound semiconductor device, comprising steps of:
- forming a separator layer on an auxiliary substrate;
forming an undercoat layer on said separator layer;
forming a thermal spray depositing layer on said undercoat layer;
separating said separator layer from said undercoat layer; and
forming a Group III nitride compound semiconductor layer on a surface of said undercoat layer opposite to a surface on which said thermal spray depositing layer is formed.
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Abstract
A separator layer of Ti is formed on an auxiliary substrate of sapphire or the like. An undercoat layer of TiN is formed on the separator layer. The undercoat layer is provided so that a Group III nitride compound semiconductor layer can be grown with good crystallinity on the undercoat layer. TiN is sprayed on the undercoat layer to form a thermal spray depositing layer. Then, the separator layer is chemically etched to reveal the undercoat layer. Then, a Group III nitride compound semiconductor layer is grown on a surface of the undercoat layer.
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11 Claims
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1. A method of producing a Group III nitride compound semiconductor device, comprising steps of:
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forming a separator layer on an auxiliary substrate;
forming an undercoat layer on said separator layer;
forming a thermal spray depositing layer on said undercoat layer;
separating said separator layer from said undercoat layer; and
forming a Group III nitride compound semiconductor layer on a surface of said undercoat layer opposite to a surface on which said thermal spray depositing layer is formed. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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- 8. A Group III nitride compound semiconductor device comprising a substrate formed by spray coating, an undercoat layer formed on said substrate, and a Group III nitride compound semiconductor layer epitaxially grown on said undercoat layer.
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