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Method for preparing a bonding surface of a semiconductor layer of a wafer

  • US 20040209441A1
  • Filed: 03/25/2004
  • Published: 10/21/2004
  • Est. Priority Date: 03/26/2003
  • Status: Active Grant
First Claim
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1. A method for preparing a bonding surface of a semiconductor layer of a wafer comprising:

  • treating the bonding surface to oxidize contaminants;

    cleaning the bonding surface to remove essentially all remaining contaminants; and

    oxidizing the bonding surface with ozone to improve the hydrophilic properties of the bonding surface.

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