Method of manufacturing a gap-filled structure of a semiconductor device
First Claim
1. A method of filling a recess in a surface of an object comprising the steps of:
- providing an atomic layer processing apparatus having a working chamber, at least a first chemical supply unit for the supply of a first chemical agent and a second chemical supply unit for the supply of a second chemical agent into said working chamber, said first chemical agent and said second chemical agent reacting with each other to produce a deposition material;
supplying said first chemical agent and said second chemical agent to said working chamber after said object is placed into said atomic layer processing apparatus;
causing a reaction between said first chemical agent and said second chemical agent for producing reaction products that contains said deposition material;
evacuating said working chamber for removing said reaction products except said deposition material;
depositing said deposition material into said recess by a process selected from atomic layer deposition and chemical vapor deposition for decomposing at least one of said first chemical agent and said second chemical agent in order to deposit said deposition material in the form of a deposited layer of a uniform thickness onto said surface and into said recess;
filling said recess by a process selected from continuously depositing said deposition material by said chemical vapor deposition and by repeating said step of depositing said deposition material by said atomic layer deposition process until said recess is completely filled, said deposited layer on said top surface having a thickness being substantially equal to half of said width of said recess.
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Abstract
This invention relates to process sequence by atomic layer chemical vapor processing that includes thin film deposition for diffusion barriers in the vias, trenches or contact plug-holes followed by gap fill with ALD/CVD process and subsequent removal of the blanket film on the top by Atomic Layer Processing/Chemical Vapor Processing. The processes can be carried out in separate chambers or may be combined into one or more chambers. The apparatus employed in these processing steps allows the practitioner to rapidly complete process sequences of barrier deposition, gap fill and top layer planarization. In case of copper metallization scheme, ALD gap fill can be employed to replace electrochemical deposition of copper. Atomic layer removal of copper and other blanket films by gas phase reactions can replace the chemical-mechanical-polishing of the blanket films. Additional advantages of such processing scheme are elimination of defects, dishing, erosion, corrosion, liquid-electrolyte, slurry and other liquid waste. Benefit of such a process scheme is entrapment of the effluents and also precise metering and control of the injected amount to affect the chemical reaction in each step of the sequence that can lead to significant savings and higher chemical utilization efficiency.
605 Citations
14 Claims
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1. A method of filling a recess in a surface of an object comprising the steps of:
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providing an atomic layer processing apparatus having a working chamber, at least a first chemical supply unit for the supply of a first chemical agent and a second chemical supply unit for the supply of a second chemical agent into said working chamber, said first chemical agent and said second chemical agent reacting with each other to produce a deposition material;
supplying said first chemical agent and said second chemical agent to said working chamber after said object is placed into said atomic layer processing apparatus;
causing a reaction between said first chemical agent and said second chemical agent for producing reaction products that contains said deposition material;
evacuating said working chamber for removing said reaction products except said deposition material;
depositing said deposition material into said recess by a process selected from atomic layer deposition and chemical vapor deposition for decomposing at least one of said first chemical agent and said second chemical agent in order to deposit said deposition material in the form of a deposited layer of a uniform thickness onto said surface and into said recess;
filling said recess by a process selected from continuously depositing said deposition material by said chemical vapor deposition and by repeating said step of depositing said deposition material by said atomic layer deposition process until said recess is completely filled, said deposited layer on said top surface having a thickness being substantially equal to half of said width of said recess. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification