SILICON CARBIDE MOSFETS WITH INTEGRATED ANTIPARALLEL JUNCTION BARRIER SCHOTTKY FREE WHEELING DIODES AND METHODS OF FABRICATING THE SAME
First Claim
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1. A silicon carbide semiconductor device, comprising:
- a silicon carbide DMOSFET; and
an integral silicon carbide Schottky diode configured to have a turn-on voltage lower than a turn-on voltage of a built-in body diode of the DMOSFET.
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Abstract
Silicon carbide semiconductor devices and methods of fabricating silicon carbide semiconductor devices have a silicon carbide DMOSFET and an integral silicon carbide Schottky diode configured to at least partially bypass a built in diode of the DMOSFET. The Schottky diode may be a junction barrier Schottky diode and may have a turn-on voltage lower than a turn-on voltage of a built-in body diode of the DMOSFET. The Schottky diode may have an active area less than an active area of the DMOSFET.
212 Citations
53 Claims
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1. A silicon carbide semiconductor device, comprising:
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a silicon carbide DMOSFET; and
an integral silicon carbide Schottky diode configured to have a turn-on voltage lower than a turn-on voltage of a built-in body diode of the DMOSFET. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A silicon carbide semiconductor device, comprising:
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a first n-type silicon carbide layer;
a p-type silicon carbide well region in the first n-type silicon carbide layer and extending to a first surface of the first n-type silicon carbide layer;
a second n-type silicon carbide layer in the first n-type silicon carbide layer adjacent a portion of p-type silicon carbide well region, the second n-type silicon carbide layer extending to the first surface of the first n-type silicon carbide layer and having a carrier concentration that is higher than a carrier concentration of the first n-type silicon carbide layer;
a gate insulator layer on the first n-type silicon carbide layer, the second n-type silicon carbide layer and the p-type silicon carbide well region;
a plurality of spaced apart p-type silicon carbide regions in the first n-type silicon carbide to provide a junction barrier grid, a peripheral one of the plurality of spaced apart p-type silicon carbide regions is adjacent the second n-type silicon carbide region and the p-type silicon carbide well region;
a Schottky contact on the first n-type silicon carbide layer and the plurality of p-type silicon carbide regions;
a source contact adjacent the Schottky contact and on the second n-type silicon carbide layer;
a gate contact on the gate insulator layer; and
a drain contact on the first n-type silicon carbide layer opposite the first surface of the first n-type silicon carbide layer. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
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31. A silicon carbide semiconductor device, comprising:
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a silicon carbide DMOSFET; and
means for at least partially bypassing a built-in pn junction diode between a well region and a drift region of the DMOSFET when a negative voltage is applied to a drain of the DMOSFET, the means for at least partially bypassing being integral to the silicon carbide DMOSFET. - View Dependent Claims (32, 33, 34, 35)
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36. A method of fabricating a silicon carbide semiconductor device, comprising:
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forming a silicon carbide DMOSFET; and
forming an integral silicon carbide Schottky diode configured to have a turn-on voltage lower than a turn-on voltage of a built-in body diode of the DMOSFET. - View Dependent Claims (37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47)
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48. A method of fabricating a silicon carbide semiconductor device, comprising:
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forming a first n-type silicon carbide layer;
forming a p-type silicon carbide well region in the first n-type silicon carbide layer and extending to a first surface of the first n-type silicon carbide layer;
forming a second n-type silicon carbide layer in the first n-type silicon carbide layer adjacent a portion of p-type silicon carbide well region, the second n-type silicon carbide layer extending to the first surface of the first n-type silicon carbide layer and having a carrier concentration that is higher than a carrier concentration of the first n-type silicon carbide layer;
forming a gate insulator layer on the first n-type silicon carbide layer, the second n-type silicon carbide layer and the p-type silicon carbide well region;
forming a plurality of spaced apart p-type silicon carbide regions in the first n-type silicon carbide to provide a junction barrier grid, a peripheral one of the plurality of spaced apart p-type silicon carbide regions is adjacent the second n-type silicon carbide region and the p-type silicon carbide well region;
forming a Schottky contact on the first n-type silicon carbide layer and the plurality of p-type silicon carbide regions;
forming a source contact adjacent the Schottky contact and on the second n-type silicon carbide layer;
forming a gate contact on the gate insulator layer; and
forming a drain contact on the first n-type silicon carbide layer opposite the first surface of the first n-type silicon carbide layer. - View Dependent Claims (49, 50, 51, 52, 53)
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Specification