Substrate support having heat transfer system

• US 20040212947A1
• Filed: 04/22/2003
• Published: 10/28/2004
• Est. Priority Date: 04/22/2003
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Ye, Yan, Hoffman, Daniel J., Ramaswamy, Kartik, Hanawa, Hiroji, Ishikawa, Tetsuya, Nguyen, Andrew, Lue, Brian C., Cheng, Wing Lau, Wong, Kwok Manus, Kats, Semyon L.
• Granted Patent: US 7,221,553 B2
• Time in Patent Office: Days
• US Class Current: 361/234
• CPC Class Codes: H01L 21/67109 mainly by convection

Abstract

A support for a substrate processing chamber has upper and lower walls that are joined by a peripheral sidewall to define a reservoir. A fluid inlet supplies a heat transfer fluid to the reservoir. In one version, a plurality of protrusions extends into the reservoir to perturb the flow of the heat transfer fluid through the reservoir. In another version, the reservoir is an elongated channel having one or more of (i) serpentine convolutions, (ii) integral fins extending into the channel, (iii) a roughened internal surface, or (iv) a changing cross-section. A fluid outlet discharges the heat transfer fluid from the reservoir.

Claims

1. A substrate support for a substrate processing chamber, the substrate support comprising:

(a) a chuck having a substrate receiving surface;

(b) a fluid circulating reservoir below the chuck, the reservoir comprising upper and lower walls that are joined by a peripheral sidewall;

(c) a fluid inlet to supply a heat transfer fluid to the reservoir;

(d) a plurality of protrusions that extend into the reservoir to perturb the flow of heat transfer fluid in the reservoir; and

(e) a fluid outlet to discharge the heat transfer fluid from the reservoir.

2. A substrate support according to claim 1 wherein the chuck comprises an electrostatic chuck having an electrode covered by a dielectric, and an electrical contact to charge the electrode.

3. A substrate support according to claim 1 wherein the peripheral sidewall of the reservoir is about a perimeter of the substrate.

4. A substrate support according to claim 1 wherein the substrate receiving surface covers an area, and the reservoir extends across at least about 60% of the area of the substrate receiving surface.

5. A support according to claim 1 wherein the protrusions comprise spaced apart mesas.

6. A support according to claim 5 wherein the spaced apart mesas extend downwardly from the upper wall.

7. A support according to claim 5 wherein the protrusions are of a three-dimensional metal foil.

8. A support according to claim 1 wherein the fluid inlet comprises an inlet port near a peripheral portion of the reservoir;

and the fluid outlet comprises an outlet port near a central portion of the reservoir.

9. A support according to claim 1 wherein the peripheral sidewall extends outwardly from the upper wall.

10. A support according to claim 9 further comprising a third wall that is joined along a peripheral lip to the lower wall to define a second reservoir, wherein the fluid outlet is capable of discharging the heat transfer fluid into the second reservoir.

11. A substrate processing chamber comprising a substrate support according to claim 1, the chamber further comprising:

a gas supply conduit to provide a gas into the chamber;

a gas energizer to energize the gas to form a plasma; and

an exhaust port to exhaust the gas from the chamber.

12. A substrate processing method comprising:

(a) placing a substrate in a process zone, the substrate having an area;

(b) regulating a temperature of the substrate by;

(i) flowing a heat transfer fluid through an enclosed volume below the substrate area such that the fluid does not contact the substrate, and

(ii) perturbing the flow of the heat transfer fluid in the enclosed volume by causing the heat transfer fluid to flow around protrusions in the enclosed volume;

(c) introducing a process gas into the process zone;

(d) energizing the process gas to process the substrate; and

(e) exhausting the process gas from the process zone.

13. A method according to claim 12 further comprising heating or cooling the heat transfer fluid.

14. A support for a substrate processing chamber, the support comprising:

(a) an upper wall having a channel therein and comprising integral fins that are spaced apart and extend outwardly from the upper wall and into the channel;

(b) a lower wall to cover the channel;

(c) a fluid inlet to pass a heat transfer fluid into the channel; and

(d) a fluid outlet to discharge the heat transfer fluid.

15. A support according to claim 14 wherein the channel comprises serpentine convolutions.

16. A support according to claim 14 wherein the channel comprises a roughened internal surface having a root mean square roughness value of at least about 125 microns.

17. A support according to claim 14 wherein the integral fins have tips that define gaps with the lower wall.

18. A support according to claim 14 wherein the upper wall comprises a recessed trench having the channel therein, and wherein the lower wall is sized to seat in the recessed trench to close the channel.

19. A support according to claim 14 wherein the channel comprises a roughened internal surface having a root mean square roughness value of at least about 125 microns.

20. A support according to claim 14 wherein the channel comprises a first cross-section along a first length of the channel and a second cross-section along a second length of the channel.

21. A substrate processing chamber comprising a substrate support according to claim 14, the chamber further comprising:

a gas supply conduit to provide a gas into the chamber;

a gas energizer to energize the gas to form a plasma; and

an exhaust port to exhaust the gas in the chamber.

22. A support for a substrate processing chamber, the support comprising:

(a) upper and lower walls that are joined together to form a channel therebetween, the channel having a roughened internal surface with a root mean square roughness value of at least about 125 microns;

(b) a fluid inlet to pass a heat transfer fluid into the channel; and

(c) a fluid outlet to discharge the heat transfer fluid.

23. A support according to claim 22 wherein the channel comprises serpentine convolutions.

24. A support according to claim 22 wherein the channel comprises one or more spaced apart integral fins that extend into the channel.

25. A support according to claim 22 wherein the channel comprises a first cross-section along a first length of the channel and a second cross-section along a second length of the channel.

26. A support for a substrate processing chamber, the support comprising:

(a) upper and lower walls that are joined together to form a channel therebetween, the channel having a first cross-section along a first length of the channel and a second cross-section along a second length of the channel;

(b) a fluid inlet to pass a heat transfer fluid into the channel; and

(c) a fluid outlet to discharge the heat transfer fluid.

27. A support according to claim 26 wherein the channel comprises serpentine convolutions.

28. A support according to claim 26 wherein the channel comprises one or more spaced apart integral fins that extend into the channel.

29. A support for a substrate processing chamber, the support comprising:

(a) upper and lower walls that are joined together to form a channel therebetween,

(i) the upper wall comprising integral fins that are spaced apart and extend outwardly from the upper wall and into the channel,

(ii) the channel having a first cross-section along a first length of the channel and a second cross-section along a second length of the channel, and

(iii) the channel turning back upon itself and comprising serpentine convolutions along its length;

(b) a fluid inlet to pass a heat transfer fluid into the channel; and

(c) a fluid outlet to discharge the heat transfer fluid.