×

Ferroelectric memory device

  • US 20040213038A1
  • Filed: 12/30/2003
  • Published: 10/28/2004
  • Est. Priority Date: 01/07/2003
  • Status: Active Grant
First Claim
Patent Images

1. A ferroelectric memory device comprising:

  • a plurality of word lines disposed in parallel;

    a plurality of bit lines disposed in parallel so as to intersect the word lines;

    a plurality of ferroelectric memory cells disposed at respective intersecting points of the word lines and the bit lines;

    a power supply circuit which generates a plurality of types of voltages including a word voltage and a bit voltage;

    a word line driver section which drives the word lines;

    a bit line driver section which drives the bit lines;

    a plurality of voltage supply lines which supply the plurality of types of voltages to the word line driver section and the bit line driver section from the power supply circuit; and

    a short circuit which short-circuits a supply line of the word voltage and a supply line of the bit voltage among the voltage supply lines.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×