ZnSe based light emitting device with In layer

• US 20040214363A1
• Filed: 07/03/2002
• Published: 10/28/2004
• Est. Priority Date: 05/13/1999
• Status: Abandoned Application

• Current Assignee: Akihiko Saegusa, Hideki Matsubara, Koji Katayama
• Original Assignee: Akihiko Saegusa, Hideki Matsubara, Koji Katayama
• Inventors: Saegusa, Akihiko, Matsubara, Hideki, Katayama, Koji
• Application Number:
  US10/191,286
• Publication Number:
  US 20040214363A1
• Time in Patent Office: Days
• US Class Current: 438/46
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/28 containing only elements of Group II and Group VI of the Periodic Table
• CPC Class Codes: H01L 33/40 Materials therefor

Abstract

A light emitting device includes an LED chip fixed to an electrode body via a conductive layer of In or an In alloy. The conductive layer is in ohmic-contact with an n-type ZnSe crystal substrate of the LED chip. To make the device, In or an In alloy is melted oil the electrode body, the ZnSe substrate is placed directly on tile melted In or In alloy and then subjected to at least one of vibration and pressure to achieve a good bond and ohmic contact between the In or In alloy and tile ZnSe substrate.

Claims

1. A light emitting device comprising:

an n-type Zn substrate;

an electrode base; and

a conductive layer of In or an In alloy, fixing said n-type ZnSe substrate to said electrode base together and also serving as an ohmic electrode for said n-type ZnSe substrate.

2. The light emitting device of claim 1, wherein said electrode base includes a lead frame.

3. The light emitting device of claim 1, wherein said electrode base includes an electrode provided on an insulating substrate.

4. The light emitting device of claim 1, including a ZnSe homoepitaxial light emitting diode having on said n-type ZnSe substrate an epitaxial light emitting layer formed of ZnSe-related compounds.

5. The light emitting device of claim 1, wherein said n-type ZnSe substrate has a carrier concentration of at least 3×

10¹⁷ cm<sup>−

3</sup> and less than 3×

10¹⁸ cm<sup>−

3</sup>.

6. The light emitting device of claim 1, operating on a voltage of no more than 3V.