Internal member of a plasma processing vessel

• US 20040216667A1
• Filed: 11/28/2003
• Published: 11/04/2004
• Est. Priority Date: 11/28/2002
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Moriya, Tsuyoshi, Nakayama, Hiroyuki, Mitsuhashi, Kouji, Nagayama, Nobuyuki, Nagaike, Hiroshi
• Granted Patent: US 7,780,786 B2
• Time in Patent Office: Days
• US Class Current: 118/715
• CPC Class Codes: C23C 16/4404 Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
• CPC Class Codes: H01J 37/32 Gas-filled discharge tubes heating by discharge H05B
• CPC Class Codes: H01J 37/32477 characterised by the means for protecting vessels or internal parts, e.g. coatings
• CPC Class Codes: Y10T 428/249969 Of silicon-containing material [e.g., glass, etc.]
• CPC Class Codes: Y10T 428/24997 Of metal-containing material
• CPC Class Codes: Y10T 428/31544 Addition polymer is perhalogenated
• CPC Class Codes: Y10T 428/31663 As siloxane, silicone or silane
• CPC Class Codes: Y10T 428/31721 Of polyimide

Abstract

[Problem to be solved] The present invention is to provide an internal member of a plasma processing vessel which is capable of suppressing peeling off of a thermally sprayed film formed as a top coat layer.

[Solution] A barrier coat layer 73 including a material with excellent corrosion resistance against a processing gas including a halogen element is formed between a base material 71 and a thermally sprayed film 72, and the barrier coat layer 73 is sealed by a resin or a sol-gel method.

Claims

1. An internal member of a plasma processing vessel, comprising:

a base material; and

a film formed by thermal spraying of ceramic on a surface of the base material,

wherein the film is formed of ceramic including at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd, and at least a portion of the film is sealed by a resin.

3. The internal member of claim 1, wherein the resin is selected from the group consisting of SI, PTFE, PI, PAI, PEI, PBI and PFA.

4. The internal member of claim 1, wherein the ceramic is at least one kind of ceramic selected from the group consisting of B₄C, MgO, Al₂O₃, SiC, Si₃N₄, SiO₂, CaF₂, Cr₂O₃, Y₂O₃, YF₃, ZrO₂, TaO₂, CeO₂, Ce₂O₃, CeF₃ and Nd₂O₃.

31. The internal member of any one of claims 1, 5, 9, 16, 19, 23 and 27, wherein an anodic oxidized film is formed between the base material and the film.

32. The internal member of claim 31, wherein the anodic oxidized film is sealed by an aqueous solution of metal salt.

33. The internal member of claim 31, wherein the anodic oxidized film is sealed by a resin selected from the group consisting of SI, PTFE, PI, PAI, PEI, PBI and PFA.

35. The internal member of claim 33, wherein the sintered ceramic body is formed by hydrating of ceramic selected from Y₂O₃, CeO₂, Ce₂O₃ and Nd₂O₃.

2. An internal member of a plasma processing vessel, comprising:

a base material; and

a film formed by thermal spraying of ceramic on a surface of the base material,

wherein the film has a first ceramic layer formed of ceramic including at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd and a second ceramic layer formed of ceramic including at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd, and at least a portion of at least one of the first and the second ceramic layer is sealed by a resin.

5. An internal member of a plasma processing vessel, comprising:

a base material; and

a film formed by thermal spraying of ceramic on a surface of the base material,

wherein the film is formed of ceramic including at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd, and at least a portion of the film is sealed by a sol-gel method.

7. The internal member of claim 5, wherein the sealing treatment is executed by using an element of the Group 3A in the periodic table.

8. The internal member of claim 5, wherein the ceramic is at least one kind of ceramic selected from the group consisting of B₄C, MgO, Al₂O₃, SiC, Si₃N₄, SiO₂, CaF₂, Cr₂O₃, Y₂O₃, YF₃, ZrO₂, TaO₂, CeO₂, Ce₂O₃, CeF₃ and Nd₂O₃.

6. An internal member of a plasma processing vessel, comprising:

a base material; and

a film formed by thermal spraying of ceramic on a surface of the base material,

wherein the film has a first ceramic layer formed of ceramic including at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd and a second ceramic layer formed of ceramic including at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd, and at least a portion of at least one of the first and the second ceramic layer is sealed by a sol-gel method.

9. An internal member of a plasma processing vessel, comprising:

a base material; and

a film formed on a surface of the base material,

wherein the film has a main layer formed by thermal spraying of ceramic and a barrier coat layer formed of ceramic including an element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd.

10. The internal member of claim 9, wherein the barrier coat layer is formed of at least one kind of ceramic selected from the group consisting of B₄C, MgO, Al₂O₃, SiC, Si₃N₄, SiO₂, CaF₂, Cr₂O₃, Y₂O₃, YF₃, ZrO₂, TaO₂, CeO₂, Ce₂O₃CeF₃ and Nd₂O₃.

11. The internal member of claim 9, wherein the barrier coat layer is a thermally sprayed film at least a portion of which is sealed by a resin.

12. The internal member of claim 11, wherein the resin is selected from the group consisting of SI, PTFE, PI, PAI, PEI, PBI and PFA.

13. The internal member of claim 9, wherein the barrier coat layer is a thermally sprayed film at least a portion of which is sealed by a sol-gel method.

14. The internal member of claim 13, wherein the sealing treatment is executed by using an element of the Group 3a in the periodic table.

15. The internal member of claim 9, wherein the main layer is formed of at least one kind of ceramic selected from the group consisting of B₄C, MgO, Al₂O₃, SiC, Si₃N₄, SiO₂, CaF₂, Cr₂O₃, Y₂O₃, YF₃, ZrO₂, TaO₂, CeO₂, Ce₂O₃, CeF₃ and Nd₂O₃.

16. An internal member of a plasma processing vessel, comprising:

a base material; and

a film formed on a surface of the base material,

wherein the film has a main layer formed by thermal spraying of ceramic and a barrier coat layer formed of engineering plastic formed between the base material and the main layer.

17. The internal member of claim 16, wherein the engineering plastic is selected from the group consisting of PTFE, PI, PAI, PEI, PBI, PFA, PPS and POM.

18. The internal member of claim 16, wherein the main layer is formed of at least one kind of ceramic selected from the group consisting of B₄C, MgO, Al₂O₃, SiC, Si₃N₄, SiO₂, CaF₂, Cr₂O₃, Y₂O₃, YF₃, ZrO₂, TaO₂, CeO₂, Ce₂O₃, CeF₃ and Nd₂O₃.

19. An internal member of a plasma processing vessel, comprising:

a base material; and

a film formed on a surface of the base material,

wherein the film is formed of ceramic including at least one kind of element of the Group 3a in the periodic table and at least a portion of the film is hydrated by vapor or high temperature hot water.

21. The internal member of claim 19, wherein the film is a thermally sprayed film formed by thermal spraying or a thin film formed by employing a technique for forming a thin film.

22. The internal member of claim 19, wherein the film is formed of ceramic selected from Y₂O₃, CeO₂, Ce₂O₃ and Nd₂O₃.

20. An internal member of a plasma processing vessel, comprising:

a base material; and

a film formed on a surface of the base material,

wherein the film has a first ceramic layer formed of ceramic including at least one kind of element of the Group 3a in the periodic table and a second ceramic layer made of ceramic including at least one kind of element of the Group 3a in the periodic table, and at least a portion of at least one of the first and the second ceramic layer is hydrated by vapor or high temperature hot water.

23. An internal member of a plasma processing vessel, comprising:

a base material; and

a film formed on a surface of the base material,

wherein the film has a first ceramic layer formed of ceramic including at least one kind of element of the Group 3a in the periodic table and a second ceramic layer formed by thermal spraying of ceramic, and at least a portion of the first ceramic layer is hydrated by vapor or high temperature hot water.

24. The internal member of claim 23, wherein the first ceramic layer is a thermally sprayed film formed by thermal spraying or a thin film formed by employing a technique for forming a thin-film.

25. The internal member of claim 23, wherein the first ceramic layer is formed of ceramic selected from Y₂O₃, CeO₂, Ce₂O₃ and Nd₂O₃.

26. The internal member of claim 23, wherein the second ceramic layer is formed of at least one kind of ceramic selected from the group consisting of B₄C, MgO, Al₂O₃, SiC, Si₃N₄, SiO₂, CaF₂, Cr₂O₃, Y₂O₃, YF₃, ZrO₂, TaO₂, CeO₂, Ce₂O₃, CeF₃ and Nd₂O₃.

27. An internal member of a plasma processing vessel, comprising:

a base material; and

a film formed on a surface of the base material,

wherein the film has a hydroxide layer formed of hydroxide including at least one kind of element of the Group 3a in the periodic table.

28. The internal member of claim 27, wherein the hydroxide layer is a thermally sprayed film formed by thermal spraying or a thin film formed by employing a technique for forming a thin film.

29. The internal member of claim 27, wherein the hydroxide forming the hydroxide layer is formed of hydroxide selected from Y(OH)₃, Ce(OH)₃ and Nd(OH)₃.

30. The internal member of claim 27, wherein at least a portion of the hydroxide layer is sealed.

34. An internal member of a plasma processing vessel, comprising:

a sintered ceramic body including at least one kind of element of the Group 3a in the periodic table,

wherein at least a portion of the sintered ceramic body is hydrated by vapor or high temperature hot water.

36. An internal member of a plasma processing vessel, comprising:

a sintered ceramic body including hydroxide including at least one kind of element of the Group 3a in the periodic table.

37. The internal member of claim 36, wherein the sintered ceramic body includes hydroxide selected from Y(OH)₃, Ce(OH)₃ and Nd(OH)₃.