Integrated circuit devices having an epitaxial pattern with a void region formed therein and methods of forming the same
First Claim
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1. An integrated circuit device, comprising:
- a substrate;
an epitaxial pattern on the substrate having a pair of impurity diffusion regions formed therein and a pair of void regions formed therein that are disposed between the pair of impurity diffusion regions and the substrate, respective ones of the pair of impurity diffusion regions at least partially overlapping respective ones of the pair of void regions; and
a gate electrode on the epitaxial pattern between respective ones of the pair of impurity diffusion regions.
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Abstract
An integrated circuit device includes a substrate. An epitaxial pattern is on the substrate and has a pair of impurity diffusion regions formed therein and a pair of void regions formed therein that are disposed between the pair of impurity diffusion regions and the substrate. Respective ones of the pair of impurity diffusion regions at least partially overlap respective ones of the pair of void regions. A gate electrode is on the epitaxial pattern between respective ones of the pair of impurity diffusion regions.
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Citations
42 Claims
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1. An integrated circuit device, comprising:
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a substrate;
an epitaxial pattern on the substrate having a pair of impurity diffusion regions formed therein and a pair of void regions formed therein that are disposed between the pair of impurity diffusion regions and the substrate, respective ones of the pair of impurity diffusion regions at least partially overlapping respective ones of the pair of void regions; and
a gate electrode on the epitaxial pattern between respective ones of the pair of impurity diffusion regions. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An integrated circuit device, comprising:
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a substrate;
an epitaxial pattern on the substrate having a pair of impurity diffusion regions formed therein and a void region formed therein between respective ones of the pair of impurity diffusion regions; and
a gate electrode on the epitaxial pattern between respective ones of the pair of impurity diffusion regions, the gate electrode at least partially overlapping the void region. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A semiconductor device, comprising:
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a semiconductor substrate including a device isolation layer;
an epitaxial pattern on the substrate that forms an empty space region together with the device isolation layer;
a gate electrode on the epitaxial pattern and on the device isolation region; and
impurity diffusion regions formed in the epitaxial pattern at both sides of the gate electrode. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A method of fabricating a semiconductor device comprising:
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forming an epitaxial sacrificial pattern on a semiconductor substrate;
forming an epitaxial layer on the epitaxial sacrificial pattern and on the substrate exposed by the epitaxial sacrificial pattern;
etching the epitaxial layer, the epitaxial sacrificial pattern, and a partial thickness of the substrate to form an epitaxial pattern from the epitaxial layer and a trench in the substrate;
removing the etched epitaxial sacrificial pattern exposed by the trench;
forming a device isolation region filling the trench such that a top surface of the device isolation region is lower than a top surface of the epitaxial sacrificial pattern;
forming a gate electrode crossing the epitaxial pattern; and
forming impurity diffusion regions in the epitaxial pattern at both sides of the gate electrode. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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30. A semiconductor device comprising:
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an epitaxial silicon layer electrically connected to a semiconductor substrate and is disposed on the substrate to form an insulating region therebetween;
a gate electrode crossing the epitaxial silicon layer; and
impurity diffusion regions formed on the epitaxial silicon layer at both sides of the gate electrode. - View Dependent Claims (31, 32)
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33. An integrated circuit device, comprising:
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a substrate;
an epitaxial pattern on the substrate having a pair of impurity diffusion regions formed therein and at least one void region formed therein that is disposed beneath the pair of impurity diffusion regions; and
a gate electrode on the epitaxial pattern between respective ones of the pair of impurity diffusion regions. - View Dependent Claims (34, 35, 36, 37, 38, 39, 40, 41, 42)
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Specification