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Integrated circuit devices having an epitaxial pattern with a void region formed therein and methods of forming the same

  • US 20040217434A1
  • Filed: 04/30/2004
  • Published: 11/04/2004
  • Est. Priority Date: 05/02/2003
  • Status: Abandoned Application
First Claim
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1. An integrated circuit device, comprising:

  • a substrate;

    an epitaxial pattern on the substrate having a pair of impurity diffusion regions formed therein and a pair of void regions formed therein that are disposed between the pair of impurity diffusion regions and the substrate, respective ones of the pair of impurity diffusion regions at least partially overlapping respective ones of the pair of void regions; and

    a gate electrode on the epitaxial pattern between respective ones of the pair of impurity diffusion regions.

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