Semiconductor device with inductive component and method of making
First Claim
Patent Images
1. An integrated circuit, comprising:
- a semiconductor substrate having a dielectric region formed with a trench and an adjacent cavity; and
a conductive material disposed within the trench to produce an inductance.
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Abstract
An integrated circuit (10) includes a semiconductor substrate (11) that has a top surface (32) for forming a dielectric region (14) with a trench (40) and one or more adjacent cavities (16). A conductive material such as copper is disposed within the trench to produce an inductor (50). A top surface (49) of the inductor is substantially coplanar with an interconnect surface (31) of the semiconductor substrate, which facilitates connecting to the inductor with standard integrated circuit metallization (57).
43 Citations
59 Claims
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1. An integrated circuit, comprising:
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a semiconductor substrate having a dielectric region formed with a trench and an adjacent cavity; and
a conductive material disposed within the trench to produce an inductance. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of making an integrated circuit, comprising the steps of:
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forming a dielectric region in a semiconductor substrate to have a cavity and a trench; and
disposing a conductive material within the trench to produce an inductance. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method of making an integrated circuit, comprising the steps of:
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forming a dielectric region in a semiconductor substrate, where the dielectric region has a cavity;
etching the dielectric region to form a trench adjacent to the cavity; and
disposing a conductive material in the trench to form an inductor. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27)
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28. A semiconductor device, comprising:
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a semiconductor substrate having a dielectric region formed with a cavity;
a first inductor formed within a trench defined by the dielectric region; and
a second inductor overlying the first inductor. - View Dependent Claims (29, 30, 31, 32, 33)
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- 34. A method of making an integrated circuit, comprising the step of applying a signal to a first surface of a semiconductor substrate to plate an inductor on a second surface of the semiconductor substrate.
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37. An integrated circuit comprising:
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a low resistivity, semiconductor substrate with a planar surface, the substrate including a dielectric region having a portion defined in and extending parallel with the planar surface;
an elongated trench formed in the dielectric region and including side-walls defined by low dielectric constant material, the elongated trench extending parallel with the planar surface of the semiconductor substrate a distance defining one inductor of an inductive device;
high conductivity material positioned in and substantially filling the trench and forming the one inductor of the inductive device; and
a conductive trace on the planar surface electrically connecting the one inductor of the inductive device to external circuitry.
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47. An integrated circuit comprising:
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a low resistivity, semiconductor substrate with a planar surface, the substrate including an active region and a dielectric region each having a portion defined in and extending parallel with the planar surface;
the dielectric region including a volume filled with dielectric material surrounding and defining an array of cavities, the dielectric material having a first dielectric constant and the cavities providing a second dielectric constant lower than the first dielectric constant to form an effective dielectric constant lower than the first dielectric constant;
at least one active component positioned in the active region;
an elongated trench formed in the dielectric region and including side-walls defined by low dielectric constant material, the elongated trench extending parallel with the planar surface of the semiconductor substrate a distance defining one inductor of an inductive device;
high conductivity material positioned in and substantially filling the trench and forming the one inductor of the inductive device; and
a conductive trace on the planar surface electrically connecting the one inductor of the inductive device and the at least one active component.
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48. An integrated circuit as claimed in claim 62 further including a thin conductive barrier layer positioned on an upper surface of the high conductivity material in the trench so as to have an upper surface coplanar with the planar surface of the semiconductor substrate.
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49. An integrated circuit as claimed in claim 62 further including a cavity defined at least partially by the substrate and positioned in underlying relationship adjacent the elongated trench, the cavity and the side-walls electrically and spacially separating the one inductor of the inductive device from the semiconductor substrate.
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50. An integrated circuit as claimed in claim 62 wherein the inductive device further includes at least a second inductor extending parallel with and in overlying relationship to the planar surface of the semiconductor substrate, the second inductor overlying the first inductor and separated from the first inductor by a layer of dielectric material and the first inductor and the second inductor being wound in the same direction.
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51. An integrated circuit comprising:
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a low resistivity, semiconductor substrate with a planar surface, the substrate including an active region and a dielectric region each having a portion defined in and extending parallel with the planar surface;
the dielectric region including a volume filled with dielectric material surrounding and defining an array of cavities, the dielectric material having a first dielectric constant and the cavities providing a second dielectric constant lower than the first dielectric constant to form an effective dielectric constant lower than the first dielectric constant;
at least one active component positioned in the active region;
an elongated trench formed in the dielectric region and including side-walls defined by low dielectric constant material, the elongated trench extending parallel with the planar surface of the semiconductor substrate a distance defining one inductor of an inductive device;
high conductivity material positioned in and substantially filling the trench and forming the one inductor of the inductive device;
a cavity defined at least partially by the substrate and positioned in underlying relationship adjacent the elongated trench, the cavity and the side-walls electrically and spacially separating the one inductor of the inductive device from the semiconductor substrate; and
a conductive trace on the planar surface electrically connecting the one inductor of the inductive device and the at least one active component.
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- 52. An integrated circuit as claimed in claim 66 further including a thin conductive barrier layer positioned on an upper surface of the high conductivity material in the trench so as to have an upper surface coplanar with the planar surface of the semiconductor substrate.
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53. An integrated circuit as claimed in claim 66 wherein the inductive device includes a plurality of similar inductors formed in the dielectric region.
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54. An integrated circuit as claimed in claim 66 wherein the inductive device further includes at least a second inductor extending parallel with and in overlying relationship to the planar surface of the semiconductor substrate, the second inductor overlying the first inductor and separated from the first inductor by a layer of dielectric material.
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55. An integrated circuit as claimed in claim 69 wherein the first inductor and the second inductor are wound in the same direction.
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56. An integrated circuit as claimed in claim 70 wherein the inductive device includes a transformer.
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57. An integrated circuit as claimed in claim 69 wherein the high conductivity material positioned in and substantially filling the trench defining the first inductor includes electroplated copper and the second inductor includes electroplated copper.
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58. An integrated circuit comprising:
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a semiconductor substrate with a planar surface, the substrate including a dielectric region having a portion defined in and extending parallel with the planar surface;
an elongated trench formed in the dielectric region and including side-walls defined by low dielectric constant material, the elongated trench extending parallel with the planar surface of the semiconductor substrate a distance defining at least one inductor of an inductive device;
high conductivity material positioned in and substantially filling the trench and forming the one inductor of the inductive device;
at least a second inductor extending parallel with and in overlying relationship to the planar surface of the semiconductor substrate, the second inductor overlying the first inductor and separated from the first inductor by a layer of dielectric material; and
the first inductor and the second inductor being wound in the same direction. - View Dependent Claims (44, 46)
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- 59. An integrated circuit as claimed in claim 69 wherein the inductive device includes a plurality of first inductors and a plurality of second inductors interconnected to form a single inductive device.
Specification