Method and apparatus utilizing monocrystalline insulator
First Claim
1. An integrated circuit having a voltage variable capacitor, the circuit including:
- a first semiconductor layer;
a second semiconductor layer formed on the first semiconductor layer including a material having a higher resistivity than the first semiconductor layer;
a conductive electrode; and
an insulating layer formed between the second semiconductor layer and the electrode, the insulating layer including a substantially monocrystalline layer.
22 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor apparatus includes a capacitor having a substrate, a conductive element and an insulator. The insulator comprises a substantially monocrystalline material having a relatively high dielectric constant. The semiconductor apparatus may further include a supplemental layer having a depletion zone, suitably comprised of a high-resistivity semiconductor material, for forming a voltage-variable capacitor. To facilitate the growth of the insulator and/or other layers, the various layers are suitably lattice matched. Further, the apparatus may include one or more interface layers to facilitate lattice-matching of the various layers.
-
Citations
53 Claims
-
1. An integrated circuit having a voltage variable capacitor, the circuit including:
-
a first semiconductor layer;
a second semiconductor layer formed on the first semiconductor layer including a material having a higher resistivity than the first semiconductor layer;
a conductive electrode; and
an insulating layer formed between the second semiconductor layer and the electrode, the insulating layer including a substantially monocrystalline layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. A method of making a voltage variable capacitor, including:
-
providing high resistivity material on a semiconductor;
providing a substantially monocrystalline insulating material on the high resistivity material; and
providing an electrode on the insulating material. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
-
-
16. A semiconductor device, including:
-
a semiconductor material;
a conductive element; and
a substantially monocrystalline insulator disposed between the semiconductor material and the conductive element. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
-
-
29. A radio circuit having a frequency dependent circuit, the frequency dependent circuit including at least one voltage variable capacitor, and the voltage variable capacitor including:
-
a semiconductor substrate;
a high resistivity semiconductor layer on the semiconductor substrate;
a substantially monocrystalline dielectric layer formed on the high resistivity layer; and
an electrode formed on the dielectric layer. - View Dependent Claims (30, 31, 32, 33, 34, 35)
-
-
36. A semiconductor device, comprising:
-
a semiconductor substrate and a conductive element; and
an insulating layer disposed between the semiconductor substrate and the conductive element, wherein the insulating layer includes a substantially monocrystalline material. - View Dependent Claims (37, 38, 39, 40, 41, 42, 43, 44, 45, 46)
-
-
47. A voltage variable thin film capacitor, comprising;
a first semiconductor layer;
a second semiconductor layer of a higher resistivity semiconductive material formed on the first semiconductor layer;
an insulating layer formed on the second semiconductor layer comprising a thin film of substantially monocrystalline material; and
a conductive electrode formed on the insulating layer. - View Dependent Claims (48, 49, 50, 51, 52, 53)
Specification