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System and method for fabricating diodes

  • US 20040217457A1
  • Filed: 05/03/2004
  • Published: 11/04/2004
  • Est. Priority Date: 05/01/2003
  • Status: Active Grant
First Claim
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1. A method for fabricating a diode comprising the steps of:

  • providing a crucible;

    providing a substrate comprised of wide band gap material having at least one epitaxial layer within said crucible;

    providing an acceptor impurity in a gaseous state within said crucible; and

    , heating said crucible to at least 1400°

    C. for at least 60 seconds so that said acceptor diffuses into said substrate to create a p layer thereby producing a PiN diode.

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