Low cost chip carrier with integrated antenna, heat sink, or EMI shielding functions manufactured from conductive loaded resin-based materials

• US 20040217472A1
• Filed: 04/13/2004
• Published: 11/04/2004
• Est. Priority Date: 02/16/2001
• Status: Abandoned Application

• Current Assignee: Integral Technologies, Inc. (Schneider Electric SE)
• Original Assignee: Integral Technologies, Inc. (Schneider Electric SE)
• Inventors: Larsen, Thor Arne, Aisenbrey, Thomas
• Application Number:
  US10/823,099
• Publication Number:
  US 20040217472A1
• Time in Patent Office: Days
• US Class Current: 257/734
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16227 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/451 with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49109 outside the semiconductor or solid-state body
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 23/3675 characterised by the shape of the housing
• CPC Class Codes: H01L 23/49855 for flat-cards, e.g. credit cards cards per se G06K19/00
• CPC Class Codes: H01L 23/552 Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01039 : Yttrium [Y]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15153 : the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/15165 : Monolayer substrate
• CPC Class Codes: H01L 2924/1517 : Multilayer substrate
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/1532 : the connection portion being formed on the die mounting surface of the substrate
• CPC Class Codes: H01L 2924/16152 : Cap comprising a cavity for hosting the device, e.g. U-shaped cap
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01Q 1/2283 : mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
• CPC Class Codes: H01Q 1/243 : with built-in antennas
• CPC Class Codes: H01Q 1/38 : formed by a conductive layer on an insulating support patch antennas H01Q9/0407; microstrip dipole antennas H01Q9/065; microstrip slot antennas H01Q13/106; transmission line microstrip antennas H01Q13/206; manufacturing reflecting surfaces using insulating material for supporting the reflecting surface H01Q15/142

Abstract

Chip carrier with integrated functions such as antennas, EMI shields, and heat sinks are formed of a conductive loaded resin-based material. The conductive loaded resin-based material comprises micron conductive powder(s), conductive fiber(s), or a combination of conductive powder and conductive fibers in a base resin host. The ratio of the weight of the conductive powder(s), conductive fiber(s), or a combination of conductive powder and conductive fibers to the weight of the base resin host is between about 0.20 and 0.40. The micron conductive powders are formed from non-metals, such as carbon, graphite, that may also be metallic plated, or from metals such as stainless steel, nickel, copper, silver, that may also be metallic plated, or from a combination of non-metal, plated, or in combination with, metal powders. The micron conductor fibers preferably are of nickel plated carbon fiber, stainless steel fiber, copper fiber, silver fiber, or the like.

Claims

1. An integrated circuit device comprising:

a chip carrier with an integrated circuit die fixably attached to said chip carrier; and

an antenna structure molded onto said chip carrier and comprising a conductive loaded, resin-based material comprising conductive materials in a base resin host.

2. The device according to claim 1 wherein the ratio, by weight, of said conductive materials to said resin host is between about 0.20 and about 0.40.

3. The device according to claim 1 wherein said conductive materials comprise metal powder.

4. The device according to claim 3 wherein said metal powder is nickel, copper, or silver.

5. The device according to claim 3 wherein said metal powder is a non-conductive material with a metal plating.

6. The device according to claim 5 wherein said metal plating is nickel, copper, silver, or alloys thereof.

7. The device according to claim 3 wherein said metal powder comprises a diameter of between about 3 μ

m and about 12 μ

m.

8. The device according to claim 1 wherein said conductive materials comprise non-metal powder.

9. The device according to claim 8 wherein said non-metal powder is carbon, graphite, or an amine-based material.

10. The device according to claim 1 wherein said conductive materials comprise a combination of metal powder and non-metal powder.

11. The device according to claim 1 wherein said conductive materials comprise micron conductive fiber.

12. The device according to claim 11 wherein said micron conductive fiber is nickel plated carbon fiber, stainless steel fiber, copper fiber, silver fiber or combinations thereof.

13. The device according to claim 11 wherein said micron conductive fiber has a diameter of between about 3 μ

m and about 12 μ

m and a length of between about 2 mm and about 14 mm.

14. The device according to claim 1 wherein said conductive materials comprise a combination of conductive powder and conductive fiber.

15. The device according to claim 1 wherein said antenna structure is electrically connected to said integrated circuit die.

16. The device according to claim 15 wherein said electrical connection is by direct contact between said conductive loaded resin-based material and metal interconnects on a substrate within said chip carrier.

17. The device according to claim 15 wherein said electrical connection is by direct contact between said conductive loaded resin-based material and external leads of said chip carrier.

18. The device according to claim 15 further comprising an encapsulating layer between said integrated circuit die and said antenna structure.

19. The device according to claim 15 wherein said electrically contacting is through an opening in said encapsulating layer.

20. An integrated circuit device comprising:

a chip carrier with an integrated circuit die fixably attached to said chip carrier; and

an EMI shield on said chip carrier and comprising a conductive loaded, resin-based material comprising conductive materials in a base resin host.

21. The device according to claim 20 wherein the ratio, by weight, of said conductive materials to said resin host is between about 0.20 and about 0.40.

22. The device according to claim 20 wherein said conductive materials comprise metal powder.

23. The device according to claim 22 wherein said metal powder is nickel, copper, or silver.

24. The device according to claim 20 wherein said metal powder is a non-conductive material with a metal plating.

25. The device according to claim 24 wherein said metal plating is nickel, copper, silver, or alloys thereof.

26. The device according to claim 23 wherein said metal powder comprises a diameter of between about 3 μ

m and about 12 μ

m.

27. The device according to claim 20 wherein said conductive materials comprise non-metal powder.

28. The device according to claim 27 wherein said non-metal powder is carbon, graphite, or an amine-based material.

29. The device according to claim 20 wherein said conductive materials comprise a combination of metal powder and non-metal powder.

30. The device according to claim 20 wherein said conductive materials comprise micron conductive fiber.

31. The device according to claim 30 wherein said micron conductive fiber is nickel plated carbon fiber, stainless steel fiber, copper fiber, silver fiber or combinations thereof.

32. The device according to claim 30 wherein said micron conductive fiber has a diameter of between about 3 μ

m and about 12 μ

m and a length of between about 2 mm and about 14 mm.

33. The device according to claim 20 wherein said conductive materials comprise a combination of conductive powder and conductive fiber.

34. The device according to claim 20 wherein said EMI shield is electrically connected to said integrated circuit die.

35. The device according to claim 34 wherein said electrical connection is by direct contact between said conductive loaded resin-based material and metal interconnects on a substrate in said chip carrier.

36. The device according to claim 34 wherein said electrical connection is by direct contact between said conductive loaded resin-based material and external leads of said chip carrier.

37. The device according to claim 34 further comprising an encapsulating layer between said integrated circuit die and said antenna structure.

38. The device according to claim 34 wherein said electrically contacting is through an opening in said encapsulating layer.

39. The device according to claim 20 further comprising a conductive wire molded into said EMI shield.

40. The device according to claim 20 wherein said EMI shield is molded onto said chip carrier.

41. The device according to claim 20 wherein said EMI shield further comprises a solderable layer of metal.

42. An integrated circuit device comprising:

a chip carrier with an integrated circuit die fixably attached to said chip carrier; and

a heat sink on said chip carrier and comprising a conductive loaded, resin-based material comprising conductive materials in a base resin host.

43. The device according to claim 42 wherein the ratio, by weight, of said conductive materials to said resin host is between about 0.20 and about 0.40.

44. The device according to claim 42 wherein said conductive materials comprise metal powder.

45. The device according to claim 44 wherein said metal powder is nickel, copper, or silver.

46. The device according to claim 44 wherein said metal powder is a non-conductive material with a metal plating.

47. The device according to claim 46 wherein said metal plating is nickel, copper, silver, or alloys thereof.

48. The device according to claim 44 wherein said metal powder comprises a diameter of between about 3 μ

m and about 12 μ

m.

49. The device according to claim 42 wherein said conductive materials comprise non-metal powder.

50. The device according to claim 49 wherein said non-metal powder is carbon, graphite, or an amine-based material.

51. The device according to claim 42 wherein said conductive materials comprise a combination of metal powder and non-metal powder.

52. The device according to claim 42 wherein said conductive materials comprise micron conductive fiber.

53. The device according to claim 52 wherein said micron conductive fiber is nickel plated carbon fiber, stainless steel fiber, copper fiber, silver fiber or combinations thereof.

54. The device according to claim 52 wherein said micron conductive fiber has a diameter of between about 3 μ

m and about 12 μ

m and a length of between about 2 mm and about 14 mm.

55. The device according to claim 42 wherein said conductive materials comprise a combination of conductive powder and conductive fiber.

56. The device according to claim 42 wherein said heat sink is molded onto said chip carrier.

57. The device according to claim 42 further comprising a conductive wire molded into said heat sink.

58. The device according to claim 42 wherein heat sink further comprises fins or pins to increase surface area.

59. The device according to claim 42 wherein said heat sink is connected to a ground signal to form a simultaneous EMI shielding function.

60. The device according to claim 42 wherein said heat sink is bonded onto said chip carrier with an adhesive.

61. The device according to claim 42 wherein said heat sink is bonded onto said chip carrier by ultrasonic welding.

62. A method to form an integrated circuit device, said method comprising:

providing a chip carrier with an integrated circuit die fixably attached to said chip carrier;

providing a conductive loaded, resin-based material comprising conductive materials in a resin-based host; and

molding said conductive loaded, resin-based material to form an integrated antenna, heat sink, or EMI shield on said chip carrier.

63. The method according to claim 62 wherein the ratio, by weight, of said conductive materials to said resin host is between about 0.20 and about 0.40.

64. The method according to claim 62 wherein the conductive materials comprise a conductive powder.

65. The method according to claim 62 wherein said conductive materials comprise a micron conductive fiber.

66. The method according to claim 62 wherein said conductive materials comprise a combination of conductive powder and conductive fiber.

67. The method according to claim 62 wherein said molding comprises:

placing said chip carrier into a mold;

injecting said conductive loaded, resin-based material into a mold;

curing said conductive loaded, resin-based material; and

removing said chip carrier with said integrated antenna, heat sink, or shield from said mold.

68. The method according to claim 62 further comprising forming an encapsulating layer between said chip carrier and said integrated antenna, heat sink, or shield.

69. The method according to claim 62 wherein said molding comprises:

loading said conductive loaded, resin-based material into a chamber;

extruding said conductive loaded, resin-based material out of said chamber through a shaping outlet; and

curing said conductive loaded, resin-based material to form said integrated antenna, heat sink, or EMI shield.

70. The method according to claim 69 further comprising attaching said antenna, heat sink, or EMI shield to said chip carrier.

71. The method according to claim 70 wherein said step of attaching is by an adhesive.

72. The method according to claim 70 wherein said step of attaching is by an ultrasonic welding.