Adhesion type area sensor and display device having adhesion type area sensor

• US 20040217928A1
• Filed: 06/02/2004
• Published: 11/04/2004
• Est. Priority Date: 01/31/2000
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Koyama, Jun, Yamazaki, Shunpei
• Granted Patent: US 7,525,523 B2
• Time in Patent Office: Days
• US Class Current: 345/81
• CPC Class Codes: G09G 2360/142 the light being detected by light detection means within each pixel
• CPC Class Codes: G09G 3/3233 with pixel circuitry controlling the current through the light-emitting element
• CPC Class Codes: H01L 27/14678 Contact-type imagers
• CPC Class Codes: H01L 31/14 the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
• CPC Class Codes: H04N 25/534 depending on the spectral component
• CPC Class Codes: H04N 25/76 Addressed sensors, e.g. MOS or CMOS sensors
• CPC Class Codes: H04N 3/155 Control of the image-sensor operation, e.g. image processing within the image-sensor
• CPC Class Codes: H10K 39/00 Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/65 OLEDs integrated with inorganic image sensors

Abstract

A lightweight, thin, small size adhesion type area sensor is provided. A pixel of the area sensor has an EL element as a light source, and a photodiode as a photoelectric conversion element. A TFT is used with the adhesion type area sensor for controlling the operation of the EL element and the photodiode.

Claims

1-69. -69. (Canceled)

70. A semiconductor device comprising:

a substrate;

a photodiode provided over said substrate in a pixel and comprising a cathode electrode, an anode electrode, and a photoelectric conversion layer provided between the anode electrode and the cathode electrode;

an EL element provided over said substrate in said pixel;

a reset TFT provided over said substrate in said pixel;

a buffer TFT provided over said substrate in said pixel;

a selection TFT provided over said substrate in said pixel;

a reset gate signal line provided over said substrate;

a sensor gate signal line provided over said substrate;

a sensor output wiring provided over said substrate and connected to a constant electric current power supply; and

a sensor electric power source line provided over said substrate for maintaining a constant electric potential;

wherein a source region of the reset TFT is connected to the sensor electric power source line;

a drain region of the reset TFT is connected to a gate electrode of the buffer TFT and to the photodiode;

a drain region of the buffer TFT is connected to the sensor electric power line;

one of a source region and a drain region of the selection TFT is connected to the sensor output wiring, and the other is connected to a source region of the buffer TFT;

a gate electrode of the selection TFT is connected to the sensor gate signal line;

the cathode electrode of the photodiode is connected to the drain region of the reset TFT;

the reset TFT is a p-channel TFT; and

the buffer TFT is an n-channel TFT.

71. A device according to claim 70 further comprising a touch pen and a touch panel.

72. A device according to claim 70 wherein the drain region of the buffer TFT is maintained at a reference electric potential.

73. A device according to claim 70 wherein said photoelectric conversion layer comprises an amorphous silicon.

74. A device according to claim 70 wherein said semiconductor device is incorporated into a scanner.

75. A semiconductor device comprising:

a substrate;

a photodiode provided over said substrate in a pixel and comprising a cathode electrode, an anode electrode, and a photoelectric conversion layer provided between the anode electrode and the cathode electrode;

an EL element provided over said substrate in said pixel;

a reset TFT provided over said substrate in said pixel;

a buffer TFT provided over said substrate in said pixel;

a selection TFT provided over said substrate in said pixel;

a reset gate signal line provided over said substrate;

a sensor gate signal line provided over said substrate;

a sensor output wiring provided over said substrate and connected to a constant electric current power supply; and

a sensor electric power source line provided over said substrate for maintaining a constant electric potential;

wherein a source region of the reset TFT is connected to the sensor electric power source line;

a drain region of the reset TFT is connected to a gate electrode of the buffer TFT and to the photodiode;

a drain region of the buffer TFT is connected to the sensor electric power line;

one of a source region and a drain region of the selection TFT is connected to the sensor output wiring, and the other is connected to a source region of the buffer TFT;

a gate electrode of the selection TFT is connected to the sensor gate signal line;

the cathode electrode of the photodiode is connected to the drain region of the reset TFT;

the reset TFT is a p-channel TFT;

the buffer TFT is an n-channel TFT;

light emitted from the EL element is reflected on a subject and irradiated to the photodiode; and

an image signal generated from the light irradiated to the photodiode is input to the sensor output wiring.

76. A device according to claim 75 further comprising a touch pen and a touch panel.

77. A device according to claim 75 wherein the drain region of the buffer TFT is maintained at a reference electric potential.

78. A device according to claim 75 wherein said photoelectric conversion layer comprises an amorphous silicon.

79. A device according to claim 75 wherein said semiconductor device is incorporated into a scanner.

80. A semiconductor device comprising:

a substrate;

a photodiode provided over said substrate in a pixel and comprising a cathode electrode, an anode electrode, and a photoelectric conversion layer provided between the anode electrode and the cathode electrode;

an EL element provided over said substrate in said pixel;

a reset TFT provided over said substrate in said pixel;

a buffer TFT provided over said substrate in said pixel;

a selection TFT provided over said substrate in said pixel;

a reset gate signal line provided over said substrate;

a sensor gate signal line provided over said substrate;

a sensor output wiring provided over said substrate and connected to a constant electric current power supply; and

a sensor electric power source line provided over said substrate for maintaining a constant electric potential;

wherein a source region of the reset TFT is connected to the sensor electric power source line;

a drain region of the reset TFT is connected to a gate electrode of the buffer TFT and to the photodiode;

a drain region of the buffer TFT is connected to the sensor electric power line;

one of a source region and a drain region of the selection TFT is connected to the sensor output wiring, and the other is connected to a source region of the buffer TFT;

a gate electrode of the selection TFT is connected to the sensor gate signal line;

the anode electrode of the photodiode is connected to the drain region of the reset TFT;

the reset TFT is an n-channel TFT; and

the buffer TFT is a p-channel TFT.

81. A device according to claim 80 further comprising a touch pen and a touch panel.

82. A device according to claim 80 wherein the drain region of the buffer TFT is maintained at a reference electric potential.

83. A device according to claim 80 wherein said photoelectric conversion layer comprises an amorphous silicon.

84. A device according to claim 80 wherein said semiconductor device is incorporated into a scanner.

85. A semiconductor device comprising:

a substrate;

a photodiode provided over said substrate in a pixel and comprising a cathode electrode, an anode electrode, and a photoelectric conversion layer provided between the anode electrode and the cathode electrode;

an EL element provided over said substrate in said pixel;

a reset TFT provided over said substrate in said pixel;

a buffer TFT provided over said substrate in said pixel;

a selection TFT provided over said substrate in said pixel;

a reset gate signal line provided over said substrate;

a sensor gate signal line provided over said substrate;

a sensor output wiring provided over said substrate and connected to a constant electric current power supply; and

a sensor electric power source line provided over said substrate for maintaining a constant electric potential;

wherein a source region of the reset TFT is connected to the sensor electric power source line;

a drain region of the reset TFT is connected to a gate electrode of the buffer TFT and to the photodiode;

a drain region of the buffer TFT is connected to the sensor electric power line;

one of a source region and a drain region of the selection TFT is connected to the sensor output wiring, and the other is connected to a source region of the buffer TFT;

a gate electrode of the selection TFT is connected to the sensor gate signal line;

the anode electrode of the photodiode is connected to the drain region of the reset TFT;

the reset TFT is an n-channel TFT;

the buffer TFT is a p-channel TFT;

light emitted from the EL element is reflected on a subject and irradiated to the photodiode; and

an image signal generated from the light irradiated to the photodiode is input to the sensor output wiring.

86. A device according to claim 85 further comprising a touch pen and a touch panel.

87. A device according to claim 85 wherein the drain region of the buffer TFT is maintained at a reference electric potential.

88. A device according to claim 85 wherein said photoelectric conversion layer comprises an amorphous silicon.

89. A device according to claim 85 wherein said semiconductor device is incorporated into a scanner.