Adhesion type area sensor and display device having adhesion type area sensor
0 Assignments
0 Petitions
Accused Products
Abstract
A lightweight, thin, small size adhesion type area sensor is provided. A pixel of the area sensor has an EL element as a light source, and a photodiode as a photoelectric conversion element. A TFT is used with the adhesion type area sensor for controlling the operation of the EL element and the photodiode.
-
Citations
89 Claims
-
1-69. -69. (Canceled)
-
70. A semiconductor device comprising:
-
a substrate;
a photodiode provided over said substrate in a pixel and comprising a cathode electrode, an anode electrode, and a photoelectric conversion layer provided between the anode electrode and the cathode electrode;
an EL element provided over said substrate in said pixel;
a reset TFT provided over said substrate in said pixel;
a buffer TFT provided over said substrate in said pixel;
a selection TFT provided over said substrate in said pixel;
a reset gate signal line provided over said substrate;
a sensor gate signal line provided over said substrate;
a sensor output wiring provided over said substrate and connected to a constant electric current power supply; and
a sensor electric power source line provided over said substrate for maintaining a constant electric potential;
wherein a source region of the reset TFT is connected to the sensor electric power source line;
a drain region of the reset TFT is connected to a gate electrode of the buffer TFT and to the photodiode;
a drain region of the buffer TFT is connected to the sensor electric power line;
one of a source region and a drain region of the selection TFT is connected to the sensor output wiring, and the other is connected to a source region of the buffer TFT;
a gate electrode of the selection TFT is connected to the sensor gate signal line;
the cathode electrode of the photodiode is connected to the drain region of the reset TFT;
the reset TFT is a p-channel TFT; and
the buffer TFT is an n-channel TFT. - View Dependent Claims (71, 72, 73, 74)
-
-
75. A semiconductor device comprising:
-
a substrate;
a photodiode provided over said substrate in a pixel and comprising a cathode electrode, an anode electrode, and a photoelectric conversion layer provided between the anode electrode and the cathode electrode;
an EL element provided over said substrate in said pixel;
a reset TFT provided over said substrate in said pixel;
a buffer TFT provided over said substrate in said pixel;
a selection TFT provided over said substrate in said pixel;
a reset gate signal line provided over said substrate;
a sensor gate signal line provided over said substrate;
a sensor output wiring provided over said substrate and connected to a constant electric current power supply; and
a sensor electric power source line provided over said substrate for maintaining a constant electric potential;
wherein a source region of the reset TFT is connected to the sensor electric power source line;
a drain region of the reset TFT is connected to a gate electrode of the buffer TFT and to the photodiode;
a drain region of the buffer TFT is connected to the sensor electric power line;
one of a source region and a drain region of the selection TFT is connected to the sensor output wiring, and the other is connected to a source region of the buffer TFT;
a gate electrode of the selection TFT is connected to the sensor gate signal line;
the cathode electrode of the photodiode is connected to the drain region of the reset TFT;
the reset TFT is a p-channel TFT;
the buffer TFT is an n-channel TFT;
light emitted from the EL element is reflected on a subject and irradiated to the photodiode; and
an image signal generated from the light irradiated to the photodiode is input to the sensor output wiring. - View Dependent Claims (76, 77, 78, 79)
-
-
80. A semiconductor device comprising:
-
a substrate;
a photodiode provided over said substrate in a pixel and comprising a cathode electrode, an anode electrode, and a photoelectric conversion layer provided between the anode electrode and the cathode electrode;
an EL element provided over said substrate in said pixel;
a reset TFT provided over said substrate in said pixel;
a buffer TFT provided over said substrate in said pixel;
a selection TFT provided over said substrate in said pixel;
a reset gate signal line provided over said substrate;
a sensor gate signal line provided over said substrate;
a sensor output wiring provided over said substrate and connected to a constant electric current power supply; and
a sensor electric power source line provided over said substrate for maintaining a constant electric potential;
wherein a source region of the reset TFT is connected to the sensor electric power source line;
a drain region of the reset TFT is connected to a gate electrode of the buffer TFT and to the photodiode;
a drain region of the buffer TFT is connected to the sensor electric power line;
one of a source region and a drain region of the selection TFT is connected to the sensor output wiring, and the other is connected to a source region of the buffer TFT;
a gate electrode of the selection TFT is connected to the sensor gate signal line;
the anode electrode of the photodiode is connected to the drain region of the reset TFT;
the reset TFT is an n-channel TFT; and
the buffer TFT is a p-channel TFT. - View Dependent Claims (81, 82, 83, 84)
-
-
85. A semiconductor device comprising:
-
a substrate;
a photodiode provided over said substrate in a pixel and comprising a cathode electrode, an anode electrode, and a photoelectric conversion layer provided between the anode electrode and the cathode electrode;
an EL element provided over said substrate in said pixel;
a reset TFT provided over said substrate in said pixel;
a buffer TFT provided over said substrate in said pixel;
a selection TFT provided over said substrate in said pixel;
a reset gate signal line provided over said substrate;
a sensor gate signal line provided over said substrate;
a sensor output wiring provided over said substrate and connected to a constant electric current power supply; and
a sensor electric power source line provided over said substrate for maintaining a constant electric potential;
wherein a source region of the reset TFT is connected to the sensor electric power source line;
a drain region of the reset TFT is connected to a gate electrode of the buffer TFT and to the photodiode;
a drain region of the buffer TFT is connected to the sensor electric power line;
one of a source region and a drain region of the selection TFT is connected to the sensor output wiring, and the other is connected to a source region of the buffer TFT;
a gate electrode of the selection TFT is connected to the sensor gate signal line;
the anode electrode of the photodiode is connected to the drain region of the reset TFT;
the reset TFT is an n-channel TFT;
the buffer TFT is a p-channel TFT;
light emitted from the EL element is reflected on a subject and irradiated to the photodiode; and
an image signal generated from the light irradiated to the photodiode is input to the sensor output wiring. - View Dependent Claims (86, 87, 88, 89)
-
Specification