Please download the dossier by clicking on the dossier button x
×

[LOW TEMPERATURE POLYSILICON THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME]

  • US 20040219723A1
  • Filed: 08/07/2003
  • Published: 11/04/2004
  • Est. Priority Date: 04/16/2003
  • Status: Active Grant
First Claim
Patent Images

1. A method of forming a low temperature polysilicon thin film transistor, comprising the steps of:

  • forming an amorphous silicon layer over a substrate;

    performing a plasma treatment;

    transforming the amorphous silicon layer into a polysilicon layer;

    patterning the polysilicon layer to form a plurality of island polysilicon layers;

    forming a channel region and a doped source/drain region on each side of the channel region in each island polysilicon layer; and

    forming a gate over each channel region.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×