Memory cell and method for forming the same

• US 20040219742A1
• Filed: 05/26/2004
• Published: 11/04/2004
• Est. Priority Date: 06/21/2002
• Status: Active Grant

• Current Assignee: Nanya Technology Corporation
• Original Assignee: Kris K. Brown
• Inventors: Brown, Kris K.
• Granted Patent: US 6,921,935 B2
• Time in Patent Office: Days
• US Class Current: 438/232
• CPC Class Codes: H01L 28/90 having vertical extensions
• CPC Class Codes: H01L 29/6653 using the removal of at least part of spacer, e.g. disposable spacer
• CPC Class Codes: H01L 29/66553 using inside spacers, permanent or not
• CPC Class Codes: H01L 29/66666 Vertical transistors H01L29/66712, H01L29/66742 take precedence
• CPC Class Codes: H10B 12/033 the capacitor extending over the transistor
• CPC Class Codes: H10B 12/05 Making the transistor
• CPC Class Codes: H10B 12/31 having a storage electrode stacked over the transistor

Abstract

A semiconductor memory cell structure and method for forming the same. The memory cell is formed on a surface of a substrate and includes an active region formed in the substrate, an epitaxial post formed on the surface of the substrate over the active region. The epitaxial post has at least one surface extending outwardly from the surface of the substrate and another surface opposite of the surface of the substrate. A gate structure is formed adjacent to at least a portion of all the outwardly extending surfaces of the epitaxial post, and a capacitor formed on an exposed surface of the epitaxial post.

Claims

1. A semiconductor structure formed on a surface of a substrate, comprising:

an active region formed in the substrate;

an epitaxial post formed on the surface of the substrate over the active region, the epitaxial post having at least one surface extending outwardly from the surface of the substrate and further having a surface opposite of the surface of the substrate;

a gate structure formed adjacent to at least a portion of all the outwardly extending surfaces of the epitaxial post; and

a capacitor formed on an exposed surface of the epitaxial post.

2-49. -49. (cancelled)