Methods of manufacturing semiconductor devices having a ruthenium layer via atomic layer deposition and associated apparatus and devices
First Claim
1. A method of fabricating an electrode for a microelectronic device, the method comprising:
- forming a ruthenium seed layer using atomic layer deposition on a semiconductor substrate;
forming a main ruthenium layer on the ruthenium seed layer; and
patterning the main ruthenium layer and the ruthenium seed layer to form the electrode.
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Abstract
Methods of fabricating a semiconductor device are provided in which a storage node contact plug is formed on a semiconductor substrate. A ruthenium seed layer is then formed via atomic layer deposition on the storage node contact plug, and a main ruthenium layer is formed on the ruthenium seed layer. The main ruthenium layer and the ruthenium seed layer are patterned to form a lower electrode, and a dielectric layer is formed on the lower electrode. Finally, an upper electrode is formed on the dielectric layer. The upper electrode may be formed by forming a second ruthenium seed layer using atomic layer deposition on the dielectric layer and forming a second main ruthenium layer on the second ruthenium seed layer. The main ruthenium layer and/or the second main ruthenium layer may be formed via chemical vapor deposition.
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Citations
33 Claims
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1. A method of fabricating an electrode for a microelectronic device, the method comprising:
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forming a ruthenium seed layer using atomic layer deposition on a semiconductor substrate;
forming a main ruthenium layer on the ruthenium seed layer; and
patterning the main ruthenium layer and the ruthenium seed layer to form the electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of forming a ruthenium layer in a semiconductor device, the method comprising:
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using atomic layer deposition to form a ruthenium seed layer on a semiconductor substrate;
using a gas containing hydrogen to remove impurities from the ruthenium seed layer; and
forming a main ruthenium layer on the ruthenium seed layer. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A method of manufacturing a semiconductor memory device, the method comprising:
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forming an interlayer dielectric and a storage node contact plug on a semiconductor substrate;
forming a first ruthenium seed layer using atomic layer deposition on the storage node contact plug;
forming a first main ruthenium layer using chemical vapor deposition on the first ruthenium seed layer;
forming a lower electrode by polishing the first main ruthenium layer and the first ruthenium seed layer using chemical mechanical polishing;
forming a dielectric layer on the lower electrode;
forming a second ruthenium seed layer using atomic layer deposition on the dielectric layer; and
completing an upper electrode by forming a second main ruthenium layer using chemical vapor deposition on the second ruthenium seed layer. - View Dependent Claims (26)
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27. A semiconductor device having a capacitor, comprising:
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a lower electrode on a semiconductor substrate, the lower electrode comprising a first ruthenium seed layer having an oxygen content of less than 5% and a first main ruthenium layer on the first ruthenium seed layer;
a dielectric layer on the lower electrode; and
an upper electrode comprising a second ruthenium seed layer having an oxygen content of less than 5% and a second main ruthenium layer on the ruthenium seed layer. - View Dependent Claims (28, 29, 30, 31)
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32. An apparatus for manufacturing a ruthenium layer on a semiconductor substrate, the apparatus comprising:
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an atomic layer deposition chamber that is configured to deposit a ruthenium seed layer on the semiconductor substrate via atomic level deposition;
a chemical vapor deposition chamber that is configured to deposit a main ruthenium layer on the ruthenium seed layer via chemical vapor deposition; and
a transfer module operatively connected to the atomic layer deposition chamber and the chemical vapor deposition chamber that is configured to transfer the semiconductor substrate between the atomic level deposition chamber and the chemical vapor deposition chamber. - View Dependent Claims (33)
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Specification