Method of manufacturing electronic device

• US 20040226827A1
• Filed: 08/08/2003
• Published: 11/18/2004
• Est. Priority Date: 05/14/2003
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Matsuda, Tetsuo, Kaneko, Hisashi
• Granted Patent: US 7,214,305 B2
• Time in Patent Office: Days
• US Class Current: 205/123
• CPC Class Codes: C25D 5/02 Electroplating of selected surface areas
• CPC Class Codes: C25D 5/022 using masking means
• CPC Class Codes: C25D 5/34 Pretreatment of metallic surfaces to be electroplated
• CPC Class Codes: C25D 7/123 Semiconductors first coated with a seed layer or a conductive layer
• CPC Class Codes: H01L 21/2885 using an external electrical current, i.e. electro-deposition
• CPC Class Codes: H01L 21/76873 for electroplating
• CPC Class Codes: H01L 21/76879 by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating plating on semiconductors in general H01L21/288
• CPC Class Codes: H05K 2203/0392 Pretreatment of metal, e.g. before finish plating, etching improvement of the adhesion between an insulating substrate and a metal by special treatment of the metal H05K3/382
• CPC Class Codes: H05K 3/107 by filling grooves in the support with conductive material H05K3/045, H05K3/101, H05K3/1258 and H05K3/465 take precedence
• CPC Class Codes: H05K 3/423 characterised by electroplating method

Abstract

Disclosed is a method of manufacturing an electronic device, comprising forming a concave portion on the surface of a base member, forming an electrically conductive seed layer on that surface of the base member on which a plated film is to be formed, and applying an electrolytic plating treatment with the seed layer used as a common electrode under the condition that a substance for accelerating the electrolytic plating is allowed to be present in the concave portion of the base member in an amount larger than that on the surface of the base member to form a plated film.

Claims

1. A method of manufacturing an electronic device, comprising:

forming a concave portion on the surface of a base member;

forming an electrically conductive seed layer on that surface of the base member on which a plated film is to be formed; and

applying an electrolytic plating treatment with the seed layer used as a common electrode under the condition that a substance for accelerating the electrolytic plating is allowed to be present in the concave portion of the base member in an amount larger than that on the surface of the base member to form a plated film.

2. A method of manufacturing an electronic device according to claim 1, wherein the substance for accelerating the electrolytic plating is supplied prior to the electrolytic plating treatment to the surface including the concave portion of the base member.

3. A method of manufacturing an electronic device according to claim 1, wherein the substance for accelerating the electrolytic plating is contained in an electrolytic plating solution and supplied onto the surface including the concave portion of the base member during the electrolytic plating treatment.

4. A method of manufacturing an electronic device according to claim 1, wherein concentration or density per unit area of the substance for accelerating the electrolytic plating in the concave portion of the base member is higher than the substance for accelerating the electrolytic plating on the surface of the base member.

5. A method of manufacturing an electronic device according to claim 4, wherein the concentration per unit area of the substance for accelerating the electrolytic plating in the concave portion of the base member is at least 5 times as high as that of the substance for accelerating the electrolytic plating on the surface of the base member.

6. A method of manufacturing an electronic device according to claim 1, further comprising subjecting the plated film to a chemical mechanical polishing treatment so as to form a buried wiring in the concave portion of the base member.

7. A method of manufacturing an electronic device, comprising:

forming a concave portion on the surface of a base member;

forming an electrically conductive seed layer on that surface of the base member on which a plated film is to be formed; and

applying an electrolytic plating treatment with the seed layer used as a common electrode under the condition that a substance for accelerating the electrolytic plating is supplied onto the surface of the base member including the concave portion, and the substance for accelerating the electrolytic plating is removed preferentially from the surface of the base member so that the removal rate of the substance for accelerating the electrolytic plating from the surface of the base member is predominantly higher than that from within the concave portion to form a plated film.

8. A method of manufacturing an electronic device according to claim 7, wherein the substance for accelerating the electrolytic plating is removed by at least one treatment selected from the group consisting of brushing and dilution.

9. A method of manufacturing an electronic device according to claim 7, wherein the substance for accelerating the electrolytic plating is removed by applying at least one treatment selected from the group consisting of a physical treatment and a chemical treatment to the surface of the base member.

10. A method of manufacturing an electronic device according to claim 7, wherein the substance for accelerating the electrolytic plating is removed by modifying the substance for accelerating the electrolytic plating by means of photochemical processing.

11. A method of manufacturing an electronic device according to claim 7, wherein the substance for accelerating the electrolytic plating is contained in an electrolytic plating solution and is preferentially removed from the surface of the base member during the electrolytic plating treatment.

12. A method of manufacturing an electronic device according to claim 7, wherein the substance for accelerating the electrolytic plating is preferentially removed from the surface of the base member continuously or intermittently during the electrolytic plating treatment.

13. A method of manufacturing an electronic device according to claim 7, further comprising subjecting the plated film to a chemical mechanical polishing treatment so as to form a buried wiring in the concave portion of the base member.

20. A method of manufacturing an electronic device according to claim 11, further comprising subjecting the plated film to a chemical mechanical polishing treatment so as to form a buried wiring in the concave portion of the base member.

14. A method of manufacturing an electronic device, comprising:

forming a concave portion on the surface of a base member;

forming an electrically conductive seed layer on that surface of the base member on which a plated film is to be formed; and

applying an electrolytic plating treatment with the seed layer used as a common electrode under the condition that a layer of a substance for inhibiting electrolytic plating is formed on the surface of the base member except the concave portion to form a plated film.

15. A method of manufacturing an electronic device according to claim 14, wherein the substance for inhibiting the electrolytic plating is an insulating material.

16. A method of manufacturing an electronic device according to claim 14, wherein the layer of the substance for inhibiting the electrolytic plating is formed by forming a film having a directivity, with the base member held inclined in the film-forming direction.

17. A method of manufacturing an electronic device according to claim 14, wherein the layer of the substance for inhibiting the electrolytic plating is formed by selectively bringing a member impregnated with the substance for inhibiting the electrolytic plating into contact with the surface except the concave portion of the base member.

18. A method of manufacturing an electronic device according to claim 17, wherein the substance for inhibiting the electrolytic plating is a component contained in the electrolytic plating solution.

19. A method of manufacturing an electronic device according to claim 17, wherein the substance for inhibiting the electrolytic plating is supplied onto the surface except the concave portion of the base member continuously or intermittently during the electrolytic plating treatment.