Integated circuit devices having active regions with expanded effective widths
First Claim
Patent Images
1. An integrated circuit device, comprising:
- a substrate having a trench formed therein;
an isolation layer disposed in the trench so as to cover a first sidewall portion of the trench; and
a gate electrode disposed on a second sidewall portion of the trench.
0 Assignments
0 Petitions
Accused Products
Abstract
An integrated circuit device includes a substrate that has a trench formed therein. An isolation layer is disposed in the trench and covers a first sidewall portion of the trench. A gate electrode is disposed on a second sidewall portion of the trench.
-
Citations
31 Claims
-
1. An integrated circuit device, comprising:
-
a substrate having a trench formed therein;
an isolation layer disposed in the trench so as to cover a first sidewall portion of the trench; and
a gate electrode disposed on a second sidewall portion of the trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
-
10-21. -21. (Canceled)
-
22. An integrated circuit device, comprising:
-
a substrate having a mesa structure thereon, the mesa structure having sidewalls and a top surface; and
a gate electrode on the mesa structure that extends across the top surface and down a portion of at least one of the sidewalls. - View Dependent Claims (23, 24)
-
-
25. A semiconductor device comprising:
-
a semiconductor substrate;
a trench which is formed by selectively etching the semiconductor substrate and which is partially filled with an isolation layer such that the upper sidewalls of the trench are exposed;
a gate insulating layer which is formed on upper sidewalls of the exposed trench and an upper surface of the semiconductor substrate; and
a gate electrode which is formed on the gate insulating layer. - View Dependent Claims (26, 27, 28, 29, 30)
-
-
31-39. -39. (Canceled)
Specification