RF MEMS switch with integrated impedance matching structure
First Claim
Patent Images
1. An impedance matching structure for a RF MEMS switch having at least one closeable RF contact in a RF line, the impedance matching structure including at least one protuberance or hump in the RF line immediately adjacent the at least one RF contact.
1 Assignment
0 Petitions
Accused Products
Abstract
An impedance matching structure for a RF MEMS switch having at least one closeable RF contact in an RF line, the impedance matching structure comprising a protuberance in the RF line immediately adjacent the RF contact that forms one element of a capacitor, the other element of which is formed by the switch'"'"'s ground plane.
121 Citations
24 Claims
- 1. An impedance matching structure for a RF MEMS switch having at least one closeable RF contact in a RF line, the impedance matching structure including at least one protuberance or hump in the RF line immediately adjacent the at least one RF contact.
- 9. A RF MEMS switch having two RF contacts disposed on a substrate, the substrate having a ground plane, and a RF conductor for coupling RF energy via the two RF contacts and wherein each of the two RF contacts has an associated protuberance or hump in the RF conductor immediately adjacent thereto.
- 12. An impedance matching structure for a RF MEMS switch formed on a substrate, the switch having two closeable RF contacts, a first of the two closeable RF contacts being coupled to a first RF line disposed on the substrate and a second one of the two closeable RF contacts being coupled to a second RF line disposed on the substrate, and an elongate moveable bar for closing a circuit between the two closeable RF contacts, the impedance matching structure comprising a first protuberance disposed on the substrate in the first RF line immediately adjacent the first one of the two closeable RF contacts and a second protuberance disposed on the substrate in the second RF line immediately adjacent the second one of the two closeable RF contacts.
-
19. A method of increasing the return loss of a MEMS switch to a level greater than 20 dB comprising:
-
a. providing a MEMS switch arranged on a substrate and whose reactance is inductive; and
b. adding at least one capacitor on said substrate, said at least one capacitor having two elements, a first element of said at least one capacitor being formed by a protuberance formed in a RF line disposed on said substrate immediately adjacent to a RF switch contact on the substrate, and a second element of said at least one capacitor being provided by a ground plane associated with the MEMS switch. - View Dependent Claims (20, 21)
-
-
22. An impedance matching structure for a MEMS switch having at least one closeable switch contacting bar, the switch contacting bar when actuated, closing the MEMS switch by making contact with contact pads disposed on a switch substrate, the impedance matching structure including a pair of protuberances or humps in signal lines coupled to said contact pads, the pair of protuberances or humps forming a π
- -network impedance matching circuit with the switch contacting bar.
- View Dependent Claims (23, 24)
Specification