Stereolithographic seal and support structure for semiconductor wafer
First Claim
1. A semiconductor work piece having a substrate with a first side and an opposing second side, the first side having a desired circuitry pattern thereon within a selected area, the substrate having a periphery within which is the selected area, comprising:
- a support structure applied directly to the first side by a stereolithographic process layer by layer completely about and extending inwardly of the periphery but external to the selected area, the support structure being of a desired height and of a material resistive to an acid etch process effective to seal the circuitry pattern in the selected area from acid when the work piece is subjected to an acid etch on the opposing second side and about the periphery, the support structure further strengthening the work piece against flexural failure.
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Accused Products
Abstract
A support structure is applied directly to the first side of a semiconductor work piece or wafer by a stereolithographic process layer by layer completely about and extending inwardly of the periphery of the wafer, but external to the selected area within which a desired circuitry pattern is placed, the support structure being of a desired height and of a material resistive to an acid etch process effective to seal the circuitry pattern in the selected area from acid when the work piece is subjected to an acid etch on the opposing second side and about the periphery. The support structure further strengthens the work piece against flexural failure.
46 Citations
15 Claims
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1. A semiconductor work piece having a substrate with a first side and an opposing second side, the first side having a desired circuitry pattern thereon within a selected area, the substrate having a periphery within which is the selected area, comprising:
a support structure applied directly to the first side by a stereolithographic process layer by layer completely about and extending inwardly of the periphery but external to the selected area, the support structure being of a desired height and of a material resistive to an acid etch process effective to seal the circuitry pattern in the selected area from acid when the work piece is subjected to an acid etch on the opposing second side and about the periphery, the support structure further strengthening the work piece against flexural failure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A support fixture for receiving a semiconductor work piece and a semiconductor work piece having a substrate with a first side and an opposing second side, the first side having a desired circuitry pattern thereon within a selected area, the substrate having a periphery within which is the selected area, comprising in combination:
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the work piece having a support structure applied directly to the first side by a stereolithographic process layer by layer completely about and extending inwardly of the substrate periphery but external to the selected area, the support structure being of a desired height and of a material resistive to an acid etch process effective to seal the circuitry pattern in the selected area from acid when the work piece is subjected to an acid etch on the opposing second side and about the periphery, the support structure further strengthening the work piece against flexural failure; and
the support fixture built stereolithographically in a coating system prior to placement of the semiconductor work piece within the system for creation of the support structure, the support fixture further conforming to the shape of the semiconductor work piece and having abutments positioned about the substrate periphery to retain the semiconductor work piece.
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Specification