Semiconductor encapsulant resin having an additive with a gradient concentration

• US 20040229404A1
• Filed: 06/29/2004
• Published: 11/18/2004
• Est. Priority Date: 02/27/1998
• Status: Abandoned Application

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Yamada, Satoru, Shiotsuka, Hidenori, Kataoka, Ichiro, Kiso, Shigeo, Zenko, Hideaki
• Application Number:
  US10/878,607
• Publication Number:
  US 20040229404A1
• Time in Patent Office: Days
• US Class Current: 438/112
• CPC Class Codes: B32B 17/04 bonded with or embedded in a plastic substance
• CPC Class Codes: B32B 17/10678 comprising UV absorbers or stabilizers, e.g. antioxidants
• CPC Class Codes: B32B 17/10788 containing ethylene vinylacetate
• CPC Class Codes: H01L 23/293 Organic, e.g. plastic
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: H01L 2924/19041 being a capacitor
• CPC Class Codes: H01L 31/048 Encapsulation of modules
• CPC Class Codes: H01L 31/0481 characterised by the composition of the encapsulation material
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

Provided is an encapsulant resin for a semiconductor that effectively functions even with a relatively small amount of an additive.

The encapsulant resin for a semiconductor is characterized in that the additive has a concentration gradient in the direction of thickness of the encapsulant resin. Specifically, the concentration gradient of the additive is established in the direction of thickness of the encapsulant resin by stacking at least two types of organic polymer resins containing different contents of the additive to form the encapsulant resin or by applying an electric field to the encapsulant resin to effect electrophoresis of the polar additive in the encapsulant resin.

Claims

1. (Canceled)

2. A method of producing a semiconductor, comprising stacking on a surface of a semiconductor element at least two types of organic polymer resin members having different contents of an additive dissolved therein and encapsulating the semiconductor with the resin.

3. A method of producing a semiconductor, comprising applying an electric field to an encapsulant resin member to effect electrophoresis of a polar additive dissolved in the encapsulant resin thereby establishing a concentration gradient of the additive in the direction of thickness of the encapsulant resin member and encapsulating a surface of a semiconductor with the encapsulant resin.

4. The method according to claim 3, wherein the electric field is applied to the encapsulant resin member by charging a surface of the encapsulant resin member.

5. The method according to claim 3, wherein the electric field is applied to the encapsulant resin member by stacking an organic polymer resin member subjected to a corona discharge or plasma discharge treatment, on a surface of the encapsulant resin member.

6. A method of producing a solar cell module, comprising stacking on a surface of a photovoltaic element at least two types of organic polymer resin members having different contents of an additive dissolved therein and encapsulating the photovoltaic element with the resin.

10. The method according to claim 6, wherein the additive is a silane coupling agent, and wherein the content of the silane coupling agent is higher on a side of the organic polymer resin members in contact with a front surface member or on a side of the organic polymer resin in contact with the photovoltaic element.

12. The method according to claim 6, wherein the additive is an ultraviolet absorbing agent, and wherein the content of the ultraviolet absorbing agent is higher on a light-incidence side of the organic polymer resin members.

7. A method of producing a solar cell module, comprising applying an electric field to an encapsulant resin member to effect electrophoresis of a polar additive dissolved in the encapsulant resin thereby establishing a concentration gradient of the additive in the direction of thickness of the encapsulant resin member and encapsulating a surface of a photovoltaic element with the encapsulant resin.

8. The method according to claim 7, wherein the electric field is applied to the encapsulant resin member by charging a surface of the encapsulant resin member.

9. The method according to claim 7, wherein the electric field is applied to the encapsulant resin member by stacking an organic polymer resin member by stacking an organic polymer resin member subjected to a corona discharge or plasma discharge treatment, on the surface of the encapsulant resin member.

11. The method according to claim 7, wherein the additive is a silane coupling agent, and wherein the content of the silane coupling agent is higher on a light-incidence side of the encapsulant resin member.

13. The method according to claim 7, wherein the additive is an ultraviolet absorbing agent, and wherein the content of the ultraviolet absorbing agent is higher on a light-incidence side of the encapsulant resin member.

14-19. -19. (Canceled)

20. A method of producing a semiconductor element encapsulated with an encapsulant resin, comprising providing an additive dissolved in the encapsulant resin with a concentration gradient in the direction of thickness of the encapsulant resin.

21. The method according to claim 20, wherein the semiconductor element is a photovoltaic element.

22. The method according to claim 20, wherein the additive is at least one selected from a silane coupling agent and an ultraviolet absorbing agent.

23. The method according to claim 20, wherein the concentration of the additive is higher at a location near the semiconductor element but lower at a location remote from the semiconductor element.

24. The method according to claim 20, wherein the concentration of the additive is lower at a location near the semiconductor element but higher at a location remote from the semiconductor element.

25. The method according to claim 20, wherein the additive is an adhesion.