Light emitting device and manufacturing method of the same

• US 20040232418A1
• Filed: 05/19/2004
• Published: 11/25/2004
• Est. Priority Date: 05/21/2003
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Miyake, Hiroyuki, Koyama, Jun
• Granted Patent: US 7,271,411 B2
• Time in Patent Office: Days
• US Class Current: 257/59
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements

Abstract

The invention provides a downsized structure of a light emitting device, and a light emitting device which has enough reliability as a downsized light emitting device. The light emitting device comprising light emitting elements according to the invention includes a signal processing circuit disposed beside an FPC and the like that tended to be the dead space conventionally. Also, the light emitting device has a sealed structure using a barrier film in which moisture and oxygen can be blocked from outside not to come into TFTs, wirings, and the light emitting elements formed over a substrate.

Claims

1. A light emitting device comprising:

a substrate;

a light emitting element covered with a barrier film over the substrate;

a wiring connected portion over the substrate; and

a signal processing circuit over the substrate,

wherein the signal processing circuit is formed with thin film transistor; and

wherein the wiring connected portion and at least a part of the signal processing circuit are located beside a same edge of the substrate.

5. The light emitting device according to any one of claim 1,

wherein each of the first barrier film, the second barrier film, the third barrier film, and the fourth barrier film includes one or more of a silicon nitride film, a silicon nitride oxide film, and a nitrogen containing carbon film.

10. An electronic apparatus using the light emitting device according to claim 1, wherein said electronic device is selected from the group consisting of a video camera, a digital camera, a goggle type display, a navigation system, an audio reproduction device, a notebook personal computer, a game machine, a portable information terminal, an image reproduction device.

2. A light emitting device comprising:

a substrate;

a wiring connected portion over the substrate;

a signal processing circuit over the substrate;

a first barrier film over the substrate;

a thin film transistor forming layer formed over the first barrier film;

a second barrier film formed over the thin film transistor forming layer;

a wiring forming layer formed over the second barrier film;

a third barrier film formed over the wring forming layer;

a light emitting element forming layer formed over the third barrier film; and

a fourth barrier film formed over the light emitting element forming layer,

wherein the second barrier film is in contact with the first barrier film in a first opening formed in a part of the thin film transistor forming layer;

wherein the signal processing circuit is formed with thin film transistor;

wherein the wiring connected portion and at least a part of the signal processing circuit are located beside a same edge of the substrate; and

wherein the signal processing circuit is formed in the exterior of an area in which the second barrier film is in contact with the first barrier film.

3. The light emitting device according to claim 2,

wherein the first barrier film is in contact with the third barrier film in a second opening which is formed in each of the thin film transistor forming layer, the second barrier film and the wiring forming layer;

wherein the thin film transistor forming layer is provided in a space between the first barrier film and the third barrier film; and

wherein the signal processing circuit is formed in the exterior of the area in which the third barrier film is in contact with the first barrier film over the substrate.

4. The light emitting device according to claim 2,

wherein the fourth barrier film is in contact with the third barrier film;

wherein the light emitting element forming layer is sandwiched between the third barrier film and the fourth barrier film; and

wherein the signal processing circuit is formed in the exterior of the area in which the third barrier film is in contact with the first barrier film over the substrate.

6. The light emitting device according to any one of claim 2,

wherein each of the first barrier film, the second barrier film, the third barrier film, and the fourth barrier film includes one or more of a silicon nitride film, a silicon nitride oxide film, and a nitrogen containing carbon film.

11. An electronic apparatus using the light emitting device according to claim 2, wherein said electronic device is selected from the group consisting of a video camera, a digital camera, a goggle type display, a navigation system, an audio reproduction device, a notebook personal computer, a game machine, a portable information terminal, an image reproduction device.

7. A light emitting device comprising:

a substrate;

a wiring connected portion over the substrate;

a signal processing circuit over the substrate;

a first barrier film over the substrate;

a thin film transistor forming layer formed over the first barrier film;

a second barrier film formed over the thin film transistor forming layer;

a wiring forming layer formed over the second barrier film;

a third barrier film formed over the wring forming layer;

an light emitting element forming layer formed over the third barrier film; and

a fourth barrier film formed over the light emitting element forming layer,

wherein the thin film transistor forming layer is covered with the first barrier film and the second barrier film;

wherein the signal processing circuit is formed with thin film transistor;

wherein the wiring connected portion and at least a part of the signal processing circuit are located beside a same edge of the substrate; and

wherein the signal processing circuit is formed in the exterior of the area in which the second barrier film is in contact with the first barrier film over the substrate.

8. The light emitting device according to claim 7,

wherein the wiring forming layer is covered with the second barrier film and the third barrier film;

wherein the light emitting element forming layer is covered with the third barrier film and the fourth barrier film; and

wherein the signal processing circuit is formed in the exterior of the area in which the third barrier film is in contact with the first barrier film over the substrate.

9. The light emitting device according to any one of claim 7,

wherein each of the first barrier film, the second barrier film, the third barrier film, and the fourth barrier film includes one or more of a silicon nitride film, a silicon nitride oxide film, and a nitrogen containing carbon film.

12. An electronic apparatus using the light emitting device according to claim 7, wherein said electronic device is selected from the group consisting of a video camera, a digital camera, a goggle type display, a navigation system, an audio reproduction device, a notebook personal computer, a game machine, a portable information terminal, an image reproduction device.