Semiconductor structure and method for implementing cross-point switch functionality

• US 20040232431A1
• Filed: 06/29/2004
• Published: 11/25/2004
• Est. Priority Date: 07/16/2001
• Status: Abandoned Application

• Current Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Lempkowski, Robert, Gamota, Daniel
• Application Number:
  US10/878,354
• Publication Number:
  US 20040232431A1
• Time in Patent Office: Days
• US Class Current: 257/83
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01S 5/021 Silicon based substrates
• CPC Class Codes: H01S 5/026 Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers stabilisation of output H01S5/06

Abstract

A semiconductor structure for providing cross-point switch functionality includes a monocrystalline silicone substrate, and an amorphous oxide material overlying the monocrystalline silicone substrate. A monocrystalline perovskite oxide material overlies the amorphous oxide material, and a monocrystalline compound semiconductor material overlies the monocrystalline perovskite oxide material. The monocrystalline compound semiconductor material includes an optical source component operable to generate a radiant energy transmission. A diffraction grating is optically coupled with the optical source component and has a configuration for passing the radiant energy transmission in a predetermined radiant energy intensity pattern, forming a plurality of replications of the radiant energy transmission. The semiconductor structure further includes at least one optical switch component optically coupled to the diffraction grating, where each optical switch component corresponds to at least one of the replicated radiant energy transmissions, and has a first state for passing the at least one replicated radiant energy transmission, and a second state prohibiting passage of the at least one replicated radiant energy transmission.

Claims

1. A semiconductor structure for providing cross-point switching functionality comprising:

a monocrystalline silicon substrate;

an amorphous oxide material overlying the monocrystalline silicon substrate;

a monocrystalline perovskite oxide material overlying the amorphous oxide material;

a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, and including an optical source component, the optical source component being operable to generate a radiant energy transmission;

a diffraction grating optically coupled with the optical source and having a configuration for passing the radiant energy transmission in a predetermined radiant energy intensity pattern forming a plurality of replications of the radiant energy transmission; and

at least one optical switch component optically coupled to the diffraction grating and corresponding to at least one of the replicated radiant energy transmissions and having a first state for passing the at least one replicated radiant energy transmission, and a second state prohibiting passage of the at least one replicated radiant energy transmission.

2-42. -42. (Canceled).