High-voltage lateral transistor with a multi-layered extended drain structure
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Abstract
A high-voltage transistor with a low specific on-state resistance and that supports high voltage in the off-state includes one or more source regions disposed adjacent to a multi-layered extended drain structure which comprises extended drift regions separated from field plate members by one or more dielectric layers. The layered structure may be fabricated in a variety of orientations. A MOSFET structure may be incorporated into the device adjacent to the source region, or, alternatively, the MOSFET structure may be omitted to produce a high-voltage transistor structure having a stand-alone drift region.
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Citations
73 Claims
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1-45. -45. (cancelled).
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46. A high-voltage transistor comprising:
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a drain region of a first conductivity type;
at least one source region of the first conductivity type;
a plurality of drift regions of the first conductivity type arranged in parallel and extending in a first direction from the drain region to the at least one source region, adjacent ones of the drift regions being separated in a second direction substantially orthogonal to the first direction by a dielectric layer, at least one field plate member disposed within the dielectric layer, the at least one field plate member being fully insulated from the drift regions;
a portion of the dielectric layer separating each drift region from the adjacent field plate member, the portion having a tapered width extending along the first direction, the tapered width being narrowest near the at least one source region and widest near the drain region. - View Dependent Claims (47, 48, 49, 50, 51, 52, 53, 54)
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55. A high-voltage transistor comprising:
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a substrate;
a drain region of a first conductivity type;
a body region of a second conductivity type opposite to the first conductivity type;
a drift region of the first conductivity type extending in a first direction from the drain region to the body region, a field plate member separated from the drift region by a dielectric layer, the field plate member being fully insulated from the drift region;
the dielectric layer having a width that is narrowest near the body region and widest near the drain region. - View Dependent Claims (56, 57, 58, 59, 60, 61, 62, 63, 64)
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65. An extended drain region of a high-voltage transistor comprising:
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a plurality of drift regions of the first conductivity type arranged substantially in parallel and extending in a first direction, adjacent ones of the drift regions being separated in a second direction substantially orthogonal to the first direction by a dielectric layer;
a field plate member disposed within the dielectric layer, the field plate member being fully insulated from the drift regions;
wherein separation between the field plate member and each of the adjacent ones of the drift regions is larger at one end of the drift regions and smaller at an opposite end of the drift regions. - View Dependent Claims (66, 67, 68, 69, 70, 71, 72, 73)
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Specification