High speed electron tunneling devices
First Claim
1. A detector for detecting electromagnetic radiation incident thereon over a desired range of frequencies, said detector having an output and exhibiting a given responsivity, said detector comprising:
- a voltage source for providing a bias voltage;
first and second non-insulating layers spaced apart from one another such that the bias voltage can be applied across the first and second non-insulating layers, wherein the first non-insulating layer is formed of a metal, and wherein said first and second non-insulating layers are configured to form an antenna structure for receiving said electromagnetic radiation over the desired range of frequencies and directing said electromagnetic radiation to a specific location within the detector; and
an arrangement disposed between the first and second non-insulating layers at said specific location and configured to serve as a transport of electrons between and to said first and second non-insulating layers as a result of the electromagnetic radiation being received at the antenna structure, said arrangement including at least a first insulating layer configured such that using only said first insulating layer in the arrangement would result in a given value of nonlinearity in said transport of electrons, with respect to said bias voltage, and said arrangement further including a different, second insulating layer disposed directly adjacent to and configured to cooperate with said first insulating layer that said nonlinearity, with respect to said bias voltage, is increased over and above said given value of nonlinearity by the inclusion of said second insulating layer without the necessity for any additional layers, and said arrangement being further configured such that the transport of electrons includes, at least in part, transport by means of tunneling, and such that at least a portion of the electromagnetic radiation incident on the antenna structure is converted to an electrical signal at the output, said electrical signal having an intensity which depends on the given responsivity.
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Accused Products
Abstract
A detector includes a voltage source for providing a bias voltage and first and second non-insulating layers, which are spaced apart such that the bias voltage can be applied therebetween and form an antenna for receiving electromagnetic radiation and directing it to a specific location within the detector. The detector also includes an arrangement serving as a transport of electrons, including tunneling, between and to the first and second non-insulating layers when electromagnetic radiation is received at the antenna. The arrangement includes a first insulating layer and a second layer configured such that using only the first insulating in the arrangement would result in a given value of nonlinearity in the transport of electrons while the inclusion of the second layer increases the nonlinearity above the given value. A portion of the electromagnetic radiation incident on the antenna is converted to an electrical signal at an output.
59 Citations
12 Claims
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1. A detector for detecting electromagnetic radiation incident thereon over a desired range of frequencies, said detector having an output and exhibiting a given responsivity, said detector comprising:
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a voltage source for providing a bias voltage;
first and second non-insulating layers spaced apart from one another such that the bias voltage can be applied across the first and second non-insulating layers, wherein the first non-insulating layer is formed of a metal, and wherein said first and second non-insulating layers are configured to form an antenna structure for receiving said electromagnetic radiation over the desired range of frequencies and directing said electromagnetic radiation to a specific location within the detector; and
an arrangement disposed between the first and second non-insulating layers at said specific location and configured to serve as a transport of electrons between and to said first and second non-insulating layers as a result of the electromagnetic radiation being received at the antenna structure, said arrangement including at least a first insulating layer configured such that using only said first insulating layer in the arrangement would result in a given value of nonlinearity in said transport of electrons, with respect to said bias voltage, and said arrangement further including a different, second insulating layer disposed directly adjacent to and configured to cooperate with said first insulating layer that said nonlinearity, with respect to said bias voltage, is increased over and above said given value of nonlinearity by the inclusion of said second insulating layer without the necessity for any additional layers, and said arrangement being further configured such that the transport of electrons includes, at least in part, transport by means of tunneling, and such that at least a portion of the electromagnetic radiation incident on the antenna structure is converted to an electrical signal at the output, said electrical signal having an intensity which depends on the given responsivity. - View Dependent Claims (2, 3)
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4. An emitter for providing electromagnetic radiation of a desired frequency at an output, said emitter comprising:
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a voltage source for providing a bias voltage;
first and second non-insulating layers spaced apart from one another such that the bias voltage can be applied across the first and second non-insulating layers; and
an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between and to said first and second non-insulating layers as a result of the bias voltage, said arrangement including at least a first insulating layer configured such that using only said first insulating layer in the arrangement would result in a given value of negative differential resistance when the bias voltage is applied across the first and second non-insulating layers, with respect to said bias voltage, and a different, second insulating layer disposed directly adjacent to and configured to cooperate with said first amorphous insulating layer such that said negative differential resistance, with respect to said bias voltage, is decreased below said given value of negative differential resistance by the inclusion of said second insulating layer without the necessity for any additional layers, and said arrangement being further configured such that the transport of electrons includes, at least in part, transport by means of tunneling such that an oscillation in the transport of electrons results, said oscillation having an oscillation frequency equal to the desired frequency due to the negative differential resistance and causing an emission of electromagnetic radiation of the desired frequency at the output. - View Dependent Claims (5)
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6. An electron tunneling device comprising:
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a) first and second non-insulating layers spaced apart from one another such that a given voltage can be applied across the first and second non-insulating layers; and
b) an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between and to said first and second non-insulating layers, said arrangement including i) a first insulating layer such that using only said first insulating layer would result in a given degree of nonlinearity in said transport of electrons, with respect to said given voltage, ii) a different, second insulating layer disposed directly adjacent to and configured to cooperate with said first insulating layer such that the transport of electrons includes, at least in part, transport by means of tunneling, and such that said nonlinearity in the transport of electrons, with respect to said given voltage, is increased over and above said given degree of nonlinearity by the inclusion of said second insulating layer without the necessity for any additional layers, and iii) a third layer of material configured to further increase said nonlinearity in the transport of electrons, with respect to said given voltage, over and above said given degree of nonlinearity.
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7. An electron tunneling device comprising:
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a) a first arrangement including first and second non-insulating layers spaced apart from one another such that a given voltage can be applied across the first and second non-insulating layers and configured to form an antenna; and
b) a second arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between and to said first and second non-insulating layers, said arrangement including i) a first insulating layer such that using only said first insulating layer would result in a given degree of nonlinearity in said transport of electrons, with respect to said given voltage, and ii) a different, second insulating layer disposed directly adjacent to and configured to cooperate with said first insulating layer such that the transport of electrons includes, at least in part, transport by means of hot electron tunneling, and such that said nonlinearity in the transport of electrons, with respect to said given voltage, is increased over and above said given degree of nonlinearity by the inclusion of said second insulating layer without the necessity for any additional layers.
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8. A modulator for modulating an input electromagnetic radiation incident thereon and providing a modulated electromagnetic radiation at an output, said modulator comprising:
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a voltage source for providing a modulation voltage, which modulation voltage is switchable between first and second voltage values;
a first arrangement including first and second non-insulating layers spaced apart from one another such that the modulation voltage can be applied across the first and second non-insulating layers; and
a second arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between and to said first and second non-insulating layers as a result of the modulation voltage, said arrangement including at least a first insulating layer configured such that the transport of electrons includes, at least in part, transport by means of tunneling, with respect to the modulation voltage, wherein said first arrangement further includes an antenna structure configured for absorbing a given fraction of the input electromagnetic radiation with a given value of absorptivity, while a remainder of the input electromagnetic radiation is reflected by the antenna structure, said absorptivity being defined as a ratio of an intensity of the given fraction to a total intensity of the input electromagnetic radiation, and wherein said second arrangement is further configured to cooperate with the first arrangement such that the antenna structure exhibits a first value of absorptivity, when said first voltage value of modulation voltage is applied across the first and second non-insulating layers, and exhibits a distinct, second value of absorptivity, when said second voltage value of modulation voltage is applied across the first and second non-insulating layers, thereby causing the antenna structure to reflect a different amount of the input electromagnetic radiation to the output as modulated electromagnetic radiation having a given value of contrast ratio, with respect to the modulation voltage, said contrast ratio being defined as a ratio of said first value of absorptivity to said second value of absorptivity. - View Dependent Claims (9, 10)
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11. A field effect transistor for receiving an external signal, switching an input signal according to the received, external signal and providing an output signal, said external signal being switchable between a first value and a second value, said field effect transistor comprising:
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a diode structure including i) a source electrode for receiving said input signal, ii) a drain electrode spaced apart from said source electrode such that a given voltage can be applied across the source and drain electrodes, and iii) an arrangement disposed between the source and drain electrodes and configured to serve as a transport of electrons between and to said source and drain electrodes, said arrangement including at least a first insulating layer configured such that the transport of electrons includes, at least in part, transport by means of tunneling with a given value of a tunneling probability, a shielding layer at least partially surrounding said diode structure; and
a gate electrode disposed adjacent to said shielding layer, said gate electrode being configured to receive said external signal and to apply said external signal as said bias voltage across said source and drain electrodes such that, when said first value of external signal is received at the gate electrode, a first signal value is provided as the output signal at the drain electrode and, when said second value of external signal is received at the gate electrode, a second signal value is provided as the output signal at the drain electrode and said output signal exhibits a given output ratio, which output ratio is defined as the ratio of the first signal value to the second signal value. - View Dependent Claims (12)
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Specification