High aspect ratio contact surfaces having reduced contaminants
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Accused Products
Abstract
Contact openings in semiconductor substrates are formed through insulative layers using an etchant material. The etchant typically leaves behind a layer of etch residue which interferes with the subsequent deposition of conductive material in the opening, as well as the conductive performance of the resulting contact. A method of etch removal from semiconductor contact openings utilizes ammonia to clean the surfaces thereof of any etch residue.
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Citations
50 Claims
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1-44. -44. (Cancelled)
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45. A semiconductor device comprising:
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an insulating layer;
an ammonia-cleaned, etched opening in said insulating layer; and
a conductor in said ammonia-cleaned, etched opening.
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46. An integrated circuit comprising:
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an ammonia-cleaned, etch residue-free High Aspect Ratio opening provided in an insulating layer, said opening being formed over a polysilicon region; and
a conductor within said opening, said conductor being electrically connected with said polysilicon region. - View Dependent Claims (47, 48, 49)
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50-53. -53. (Cancelled)
Specification