Multi-trench region for accumulation of photo-generated charge in a CMOS imager
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Abstract
A multiple-trench photosensor for use in a CMOS imager having an improved charge capacity. The multi-trench photosensor may be either a photogate or photodiode structure. The multi-trench photosensor provides the photosensitive element with an increased surface area compared to a flat photosensor occupying a comparable area on a substrate. The multi-trench photosensor also exhibits a higher charge capacity, improved dynamic range, and a better signal-to-noise ratio. Also disclosed are processes for forming the multi-trench photosensor.
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Citations
112 Claims
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1-105. -105. (Cancelled)
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106. A method of forming a photosensor, comprising the steps of:
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providing a semiconductor substrate having a doped layer of a first conductivity type;
forming a doped region of a second conductivity type in the doped layer;
forming a plurality of trenches in said doped region so that the sides and bottom of each of said plurality of trenches are of the second conductivity type; and
forming an insulating layer on the sides and bottom of each of said plurality of trenches. - View Dependent Claims (107, 108, 109, 110, 111)
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112-116. -116. (Cancelled)
Specification