Endpoint determination of process residues in wafer-less auto clean process using optical emission spectroscopy
First Claim
1. A plasma processing system for executing a two step in-situ cleaning process, comprising:
- a processing chamber having;
a gas inlet for introducing a cleaning gas, the cleaning gas optimized to remove byproducts deposited on inner surfaces of the processing chamber, and a top electrode for creating a plasma from the cleaning gas to perform an in-situ cleaning process;
a variable conductance meter for controlling a pressure inside the processing chamber independently of a flow rate of process gases, the variable conductance meter positioned on an outlet of the processing chamber;
an optical emission spectrometer (OES) for detecting an endpoint of the in-situ cleaning process performed in the processing chamber, the OES located so as to detect an emission intensity in the processing chamber from the plasma, the OES configured to trace the emission intensity from the plasma; and
a pumping system for evacuating the processing chamber between processing operations.
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Abstract
A plasma processing system is provided. The plasma processing system includes a processing chamber having a gas inlet for introducing cleaning gases. The cleaning gas is optimized to remove byproducts deposited on inner surfaces of the processing chamber. The processing chamber includes a top electrode for creating a plasma from the cleaning gas to perform the cleaning process. A variable conductance meter for controlling a pressure inside the processing chamber independently of a flow rate of process gases is included. The variable conductance meter is positioned on an outlet of the chamber. An optical emission spectrometer (OES) for detecting an endpoint of the cleaning process performed in the processing chamber is included. The OES is located to detect an emission intensity in the processing chamber from the plasma. The OES is configured to trace the emission intensity. A pumping system for evacuating the processing chamber between processing operations is included.
24 Citations
12 Claims
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1. A plasma processing system for executing a two step in-situ cleaning process, comprising:
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a processing chamber having;
a gas inlet for introducing a cleaning gas, the cleaning gas optimized to remove byproducts deposited on inner surfaces of the processing chamber, and a top electrode for creating a plasma from the cleaning gas to perform an in-situ cleaning process;
a variable conductance meter for controlling a pressure inside the processing chamber independently of a flow rate of process gases, the variable conductance meter positioned on an outlet of the processing chamber;
an optical emission spectrometer (OES) for detecting an endpoint of the in-situ cleaning process performed in the processing chamber, the OES located so as to detect an emission intensity in the processing chamber from the plasma, the OES configured to trace the emission intensity from the plasma; and
a pumping system for evacuating the processing chamber between processing operations. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A plasma processing system for executing a two step wafer-less auto clean process, comprising:
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a processing chamber having;
a gas inlet for introducing a cleaning gas, the cleaning gas optimized to remove byproducts deposited on inner surfaces of the processing chamber, and a top electrode for creating a plasma from the cleaning gas to perform an in-situ cleaning process;
a variable conductance meter for controlling a pressure inside the processing chamber independently of a flow rate of process gases, the variable conductance meter positioned on an outlet of the processing chamber;
an optical emission spectrometer (OES) for detecting an endpoint of the in-situ cleaning process performed in the processing chamber, the OES located so as to detect an emission intensity in the processing chamber from the plasma, the OES configured to trace the emission intensity from the plasma;
a pumping system for evacuating the processing chamber between processing operations; and
a computing device in communication with the OES, the computing device configured to trigger introduction of a first cleaning gas configured to remove silicon based by products from inner surfaces of the processing chamber, the computing device further configured to terminate the introduction of the first cleaning gas based upon the emission intensity, wherein in response to terminating the first cleaning gas, the computing device triggers introduction of a second cleaning gas through the gas inlet. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification