Base method treating method and electron device-use material

• US 20040235311A1
• Filed: 01/30/2004
• Published: 11/25/2004
• Est. Priority Date: 08/02/2001
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Motonyama, Seiji, Sasaki, Masaru, Nakanishi, Toshio, Sugawara, Takuya
• Granted Patent: US 7,250,375 B2
• Time in Patent Office: Days
• US Class Current: 438/775
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02247 formation by nitridation, e.g. nitridation of the substrate
• CPC Class Codes: H01L 21/02332 into an oxide layer, e.g. changing SiO to SiON
• CPC Class Codes: H01L 21/0234 treatment by exposure to a plasma
• CPC Class Codes: H01L 21/2236 from or into a plasma phase
• CPC Class Codes: H01L 21/28185 with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
• CPC Class Codes: H01L 21/28202 in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
• CPC Class Codes: H01L 21/3003 Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
• CPC Class Codes: H01L 21/3144 on silicon
• CPC Class Codes: H01L 21/3185 of siliconnitrides
• CPC Class Codes: H01L 29/513 the variation being perpendicular to the channel plane
• CPC Class Codes: H01L 29/518 the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material

Abstract

A method of processing a for an electronic device, comprising, at least: a nitridation step (a) of supplying nitrogen radicals on the surface of the electronic device substrate, to thereby form a nitride film on the surface thereof; and a hydrogenation step (b) of supplying hydrogen radicals to the surface of the electronic device substrate. By use of this method, it is possible to recover the degradation in the electric property of an insulating film due to a turnaround phenomenon which can occur at the time of nitriding an Si substrate, etc.

Claims

1. A method of processing a substrate for an electronic device, comprising, at least:

a nitridation step (1) of supplying nitrogen radicals on the surface of the electronic device substrate, to thereby form a nitride film on the surface thereof; and

a hydrogenation step (b) of supplying hydrogen radicals to the surface of the electronic device substrate.

2. A method of processing an electronic device substrate according to claim 1, wherein the hydrogenation step (b) is performed after the nitridation step (a).

3. A method of processing an electronic device substrate according to claim 1, wherein the nitridation step (a) and the hydrogenation step (b) are performed partially in parallel.

4. A method of processing an electronic device substrate according to claim 1, wherein the nitridation step (a) and the hydrogenation step (b) are performed in parallel.

5. A method of processing an electronic device substrate according to claim 1, wherein the electronic device substrate is a substrate for a semiconductor device.

6. A method of processing an electronic device substrate according to claim 1, wherein the electronic device substrate is a substrate for a liquid crystal device.

7. A method of processing an electronic device substrate according to claim 1, wherein the electronic device substrate is a substrate comprising silicon as a main component.

8. A method of processing an electronic device substrate according to claim 1, wherein the surface of the electronic device substrate is the surface of an oxide film.

9. A method of processing an electronic device substrate according to claim 1, wherein the nitrogen radicals are formed by exciting plasma in a mixture gas of an inert gas and nitrogen gas.

10. A method of processing an electronic device substrate according to claim 1, wherein the plasma is excited by microwave.

11. A method of processing an electronic device substrate according to claim 9, wherein the hydrogen radical are formed by further adding hydrogen gas to the mixture gas of an inert gas and nitrogen gas.

12. A method of processing an electronic device substrate according to claim 9, wherein the nitridation step (a) and the hydrogenation step (b) are sequentially conducted.

13. A method of processing an electronic device substrate according to claim 9, wherein the plasma excitation is once interrupted after the nitridation step, and the hydrogen radical are formed by again exciting plasma in a mixture gas of an inert gas and nitrogen gas.

14. An electronic device material comprising a substrate for an electronic device, and has a nitride film on at least a part of the surface of the electronic device substrate;

wherein the electronic device material provides a shift in the flat band voltage (Vfb) of 0.1 V or less in the case NMOS, and a shift in the flat band voltage (Vfb) of 1 V or less in the case of PMOS;

as compared with the flat band voltage of an oxide film, provided that the electronic device material is used as an insulating layer constituting an MOS type device structure.

15. An electronic device material according to claim 14, wherein the electronic device substrate is one for a semiconductor.

16. An electronic device material according to claim 14, wherein the electronic device substrate is one for a liquid crystal device.

17. An electronic device material according to claim 14, wherein electronic device substrate is a substrate comprising silicon as a main component.

18. An electronic device material according to claim 14, wherein the nitride film has been provided by nitriding the electronic device substrate.

19. An electronic device material according to claim 14, wherein the nitride film has been provided by nitriding an oxide film.