SEMICONDUCTOR PRESSURE SENSOR
First Claim
Patent Images
1. A semiconductor pressure sensor comprising:
- a non-single-crystal-silicon-based substrate;
a movable insulating diaphragm;
at least one piezoresistor positioned on the insulating diaphragm;
an insulating supporter positioned on the non-single-crystal-silicon-based substrate for fixing two ends of the insulating diaphragm and forming a cavity between the insulating diaphragm and the non-single-crystal-silicon-based substrate; and
a thin film transistor (TFT) control circuit positioned on the non-single-crystal-silicon-based substrate and electrically connected to the insulating diaphragm and the piezoresistor.
2 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor pressure sensor comprises a non-single-crystal-silicon-based substrate, a movable insulating diaphragm, at least one piezoresistor positioned on the insulating diaphragm, an insulating supporter positioned on the non-single-crystal-silicon-based substrate for fixing two ends of the insulating diaphragm and forming a cavity between the insulating diaphragm and the non-single-crystal-silicon-based substrate, and a thin film transistor (TFT) control circuit positioned on the non-single-crystal-silicon-based substrate and electrically connected to the insulating diaphragm and the piezoresistor.
-
Citations
24 Claims
-
1. A semiconductor pressure sensor comprising:
-
a non-single-crystal-silicon-based substrate;
a movable insulating diaphragm;
at least one piezoresistor positioned on the insulating diaphragm;
an insulating supporter positioned on the non-single-crystal-silicon-based substrate for fixing two ends of the insulating diaphragm and forming a cavity between the insulating diaphragm and the non-single-crystal-silicon-based substrate; and
a thin film transistor (TFT) control circuit positioned on the non-single-crystal-silicon-based substrate and electrically connected to the insulating diaphragm and the piezoresistor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
-
-
12. A semiconductor pressure sensor comprising:
-
an insulating substrate;
a movable insulating diaphragm;
a piezoresistor positioned on the insulating diaphragm;
an insulating supporter positioned on the insulating substrate for fixing two ends of the insulating diaphragm and forming a cavity between the insulating diaphragm and the insulating substrate; and
a control circuit electrically connected to the insulating diaphragm and the piezoresistor. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
-
Specification