Photovoltaic infrared radiation detector with independent three-dimensional conducting grid

• US 20040238743A1
• Filed: 05/14/2004
• Published: 12/02/2004
• Est. Priority Date: 05/26/2003
• Status: Active Grant

• Current Assignee: Commissariat a L'Energie Atomique (French Alternative Energies and Atomic Energy Commission)
• Original Assignee: Commissariat a L'Energie Atomique (French Alternative Energies and Atomic Energy Commission)
• Inventors: Gravrand, Olivier, Baylet, Jacques
• Granted Patent: US 7,041,978 B2
• Time in Patent Office: Days
• US Class Current: 250/338.4
• CPC Class Codes: H01L 27/14649 Infrared imagers
• CPC Class Codes: H01L 27/14672 Blooming suppression

Abstract

On a front face of a substrate transparent to the radiation considered, pixels are confined in a stack of absorbent semi-conducting material layers by a network of channels. An insulating layer covers the bottom and the side walls of the channels. An electrically conducting layer covers the insulating layer on the bottom and on the side walls of the channels confining at least a part of the pixels. The conducting layer can be voltage polarized.

Claims

1. Photovoltaic infrared radiation detector comprising, on a front face of a substrate transparent to the radiation considered, a stack of layers made of absorbent semi-conducting materials, a network of channels confining pixels in the stack of layers, and an insulating layer covering at least the bottom and side walls of the channels, detector comprising an electrically conducting layer covering the insulating layer on the bottom and on the side walls of the channels and electrically independent from the semi-conducting materials so as to be totally electrically insulated from the semi-conducting materials by said insulating layer.

2. Detector according to claim 1, wherein the electrically conducting layer is connected to a connection terminal.

3. Detector according to claim 1, wherein the insulating layer also covers, at least partially, the front face of at least one pixel.

4. Detector according to claim 3, wherein the electrically conducting layer covers at least a part of the insulating layer covering, at least partially, the front face of a pixel

5. Detector according to claim 4, wherein a connection terminal is situated on the electrically conducting layer, on the front face of a pixel.

6. Detector according to claim 1, wherein the stack of absorbent semi-conducting material layers forms at least two PN junctions having different cutoff wavelengths stacked on the front face of the substrate in increasing cutoff wavelength order.

7. Detector according to claim 1, wherein the stack of semi-conducting material layers comprises, between two PN junctions, an additional semi-conducting layer presenting a larger semi-conducting gap than the gaps of said semi-conducting materials.

8. Detector according to claim 1, wherein the semi-conducting materials are chosen from CdHgTe, InSb, InGaAs.

9. Detector according to claim 1, wherein the electrically conducting layer comprises a stack of several layers.

10. Detector according to claim 1, wherein the electrically conducting layer comprises at least one material chosen from Au, Ti, Al, Pt, Pd.

11. Process for achieving a photovoltaic infrared radiation detector according to claim 1, comprising deposition on a front face of a substrate, transparent to the radiation considered, of a stack of layers made of absorbent semi-conducting materials, confinement of a network of pixels by etching channels in the stack of semi-conducting material layers, deposition of an insulating layer covering at least the bottom and the side walls of the channels, and deposition of an electrically conducting layer covering the insulating layer on the bottom and the side walls of the channels confining at least a part of the pixels.

12. Process for using a photovoltaic infrared radiation detector according to claim 1, wherein the electrically conducting layer is voltage polarized.